Si－Yb quantum cascade and Si－Yb－Si PIN hybrid light-emitting diode

Dong Taige; Huang Weiqi; Huang Zhongmei; Wang Gang; Miao Xinjian; Lv Quan; Liu Shirong; Qin Chaojian

doi:10.11884/HPLPB201527.074103

Volume 27 Issue 07

Jun. 2015

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Dong Taige, Huang Weiqi, Huang Zhongmei, et al. Si－Yb quantum cascade and Si－Yb－Si PIN hybrid light-emitting diode[J]. High Power Laser and Particle Beams, 2015, 27: 074103. doi: 10.11884/HPLPB201527.074103

Citation:

Dong Taige, Huang Weiqi, Huang Zhongmei, et al. Si－Yb quantum cascade and Si－Yb－Si PIN hybrid light-emitting diode[J]. High Power Laser and Particle Beams, 2015, 27: 074103. doi: 10.11884/HPLPB201527.074103

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Si－Yb quantum cascade and Si－Yb－Si PIN hybrid light-emitting diode

doi: 10.11884/HPLPB201527.074103

1.
Key Laboratory of Photoelectron Technology and Application,Institute of Nanophotonic Physics,Guizhou University,Guiyang 550025,China;
2.
Surface Physics Laboratory,Department of Physics,Fudan University,Shanghai 200433,China;
3.
State Key Laboratory of Ore Deposit Institute of Geochemistry,Chinese Academy of Sciences,Guiyang 550003,China

Received Date: 2015-01-08
Rev Recd Date: 2015-04-13
Publish Date: 2015-06-23

Abstract

Abstract

Si－Yb quantum cascade and Si－Yb－Si PIN hybrid light-emitting diode is designed for optical communication, which is easy to be integrated on silicon chip. Photoluminescence (PL) and electroluminescence (EL) dynamics on nanosilicon deposited by Yb is investigated. Sharper PL peaks near 700 nm are observed on silicon quantum dots (Si QDs) coated by Yb. The enhanced EL peaks in the wavelength region from 1250 nm to 1650 nm are measured on silicon film deposited by Yb. It is discovered that the EL intensity enhances and the peaks number increases with increasing number of Si－Yb layers. The emission wavelength could be manipulated into the window of optical communication by Si－Yb bonding on nanosilicon.
- photoluminescence,
- electroluminescence,
- manipulating wavelength,
- Si－Yb quantum cascade