1064 nm nanosecond laser induced damage effect on graphene

The mono-bi-and trilayer graphene samples were prepared by chemical vapor deposition method and transferred to substrate. Damage effect of the graphene under 1064 nm nanosecond laser irradiation was quantified by taking Hall Effect and Raman spectra measurements. The results show that, the laser induced damage threshold values of the mono-bi-and trilayer graphene samples decrease accordingly: mono layer, 0.45 J/cm2; bilayer, 0.34 J/cm2; 3 layer, 0.23 J/cm2. When the laser energy is higher than the threshold, the sheet resistance of graphene increases, and the carrier mobility decreases. Damaged area was observed by optical microscope after high energy laser irradiation. In the damaged area, the Raman intensity ratios of the G peak (1580 cm-1) to the 2D peak (2700 cm-1) decrease. The results demonstrate that the 1064 nm nanosecond laser irradiation can exfoliate the multilayer graphene without inducing structure defects.