Volume 27 Issue 08
Sep.  2015
Turn off MathJax
Article Contents
Abstract
References
Article Navigation >  High Power Laser and Particle Beams  > 2015  >  27(08): 084002
Xie Lei, Dai Gang, Li Shun, et al. Analysis of single event effect induced by neutron with TCAD[J]. High Power Laser and Particle Beams, 2015, 27: 084002. doi: 10.11884/HPLPB201527.084002
Citation: Xie Lei, Dai Gang, Li Shun, et al. Analysis of single event effect induced by neutron with TCAD[J]. High Power Laser and Particle Beams, 2015, 27: 084002. doi: 10.11884/HPLPB201527.084002
shu

Analysis of single event effect induced by neutron with TCAD

doi: 10.11884/HPLPB201527.084002
  • 1.

    Institute of Electronic Engineering,CAEP,P.O.Box 919-537,Mianyang 621900,China

  • Received Date: 2015-04-13
  • Rev Recd Date: 2015-06-01
  • Publish Date: 2015-08-11
    Abstract
  • In the case of nuclear fission and fusion, typical energy neutrons acting on semiconductor devices are analyzed, and the distribution of the secondary particles and their energy spectra are generated. As for the worst case of the neutron, the single event effect (SEE) of Static Random Access Memory (SRAM) on 65 nm process is discussed, and the results of TCAD simulation are given. The results show that the 6 transistor SRAM cell commercial structure is difficult to avoid the SEE. Even Double Interlocked Storage Cell (DICE) structure, in the high density design, also due to the charge sharing effect, the occurrence of Single Event Upset (SEU). Because the charge sharing effect is difficult to obtain by SPICE simulation, the TCAD simulation is more suitable for the SRAM design and verification of the neutron single particle immune. At the end, the SRAM design of the neutron single particle immune on the 65nm process is discussed. It is possible to be more competitive in the way that the 6 transistor SRAM cell is added to the capacitor.
    • FullText(HTML)
    • References(0)
    • Relative Articles

  • Relative Articles

    [1]Qin Kemian, Pan Yuhe, Mao Ya’nan, An Heng, Zhang Chenguang, Zhao Jiangtao, Wang Tieshan, Peng Haibo. Two-electron resonance absorption model of laser-semiconductor interaction[J]. High Power Laser and Particle Beams, 2023, 35(9): 096002. doi: 10.11884/HPLPB202335.220376
    [2]Peng Chao, Lei Zhifeng, Zhang Zhangang, Yang Shaohua, Lai Ping, Lu Guoguang. Measurement and simulation of terrestrial atmospheric neutron spectrum in typical regions of China[J]. High Power Laser and Particle Beams, 2023, 35(5): 059001. doi: 10.11884/HPLPB202335.220353
    [3]Wang Kai, Lü Xueyang, Wu Kunlin, Feng Jiaming, Fan Xiaoqiang, Li Junjie, Yang Guixia, Lu Yi, Qiu Dong, Zou Dehui. Effects of different sequential neutron/gamma irradiation on current gain of bipolar devices[J]. High Power Laser and Particle Beams, 2020, 32(4): 044001. doi: 10.11884/HPLPB202032.190333
    [4]Han Jinhua, Guo Gang, Chen Qiming, Wen Zhang, Zhang Fuqiang. Quasi-monoenergetic neutron single event effects[J]. High Power Laser and Particle Beams, 2019, 31(2): 020201. doi: 10.11884/HPLPB201931.180254
    [5]Wang Yuanming, Ruan Linbo, Luo Yinhong, Guo Hongxia, Wang Zhongming, Yao Zhibin, Zhang Fengqi, Wang Yanping. Experiment study of DDS for single event effect[J]. High Power Laser and Particle Beams, 2016, 28(10): 106005. doi: 10.11884/HPLPB201628.151181
    [6]Xia Jiagao, Li Wenxin, Quan Xin, Li Taiguo, Zhao Yanrong. Experimental research of heavy-ion single-event effect on Ethernet chip[J]. High Power Laser and Particle Beams, 2016, 28(08): 084004. doi: 10.11884/HPLPB201628.150892
    [7]Yu Bo, Huang Tianxuan, Li Sanwei, Chen Jiabin, Jiang Wei, Chen Bolun, Pu Yudong, Yan Ji, Jing Longfei, Li Zhichao, Tang Qi, Song Zifeng, Zan Xiayu, Jiang Shaoen. Experimental study on laser indirect-drive implosion with double quads on SGⅢ facility[J]. High Power Laser and Particle Beams, 2015, 27(09): 092008. doi: 10.11884/HPLPB201527.092008
    [8]Yang Shanchao, Qi Chao, Liu Yan, Guo Xiaoqiang, Jin Xiaoming, Chen Wei, Bai Xiaoyan, Lin Dongsheng, Wang Guizhen, Wang Chenhui, Li Bin. Review of neutron induced single event effects on semiconductor devices[J]. High Power Laser and Particle Beams, 2015, 27(11): 110201. doi: 10.11884/HPLPB201527.110201
    [9]Zhang Jinxin, Guo Hongxia, Wen Lin, Guo Qi, Cui Jiangwei, Fan Xue, Xiao Yao, Xi Shanbin, Wang Xin, Deng Wei. Influencing factors of SiGe heterojunction bipolar transistor single-event effect in laser microbeam simulation test[J]. High Power Laser and Particle Beams, 2013, 25(09): 2433-2438. doi: 10.3788/HPLPB20132509.2433
    [10]Luo Yinhong, Zhang Fengqi, Guo Hongxia, Zhou Hui, Wang Yanping, Zhang Keying. Experimental study on heavy-ion single event effect on nanometer DDR SRAM[J]. High Power Laser and Particle Beams, 2013, 25(10): 2705-2710. doi: 10.3788/HPLPB20132510.2705
    [11]yao zhibin, fan ruyu, guo hongxia, wang zhongming, he baoping, zhang fengqi, zhang keying. Acquisition and classification of static single-event upset cross section for SRAM-based FPGAs[J]. High Power Laser and Particle Beams, 2011, 23(03): 0- .
    [12]fan xue, li ping, li wei, yang zhiming, zhang bin, guo hongxia, yao zhibin. Single event effects on FPGA of californium-252 and heavy-ion accelerator[J]. High Power Laser and Particle Beams, 2011, 23(08): 0- .
    [13]guo xiaoqiang, guo hongxia, wang guizhen, ling dongsheng, chen wei, bai xiaoyan, yang shanchao, liu yan. Low-energy neutron-induced single-event upsets in static random access memory[J]. High Power Laser and Particle Beams, 2009, 21(10): 0- .
    [14]geng tao. Scintillation neutron detector for DPF device[J]. High Power Laser and Particle Beams, 2007, 19(06): 0- .
    [15]jiang shi-lun, ning jia-min, xu ze-ping, xia guang-xin, xu rong-kun, li zheng-hong, guo hong-sheng. Experimental research of deuterium fiber neutron emission on Qiangguang -Ⅰ facility[J]. High Power Laser and Particle Beams, 2007, 19(05): 0- .
    [16]zhao zong-qing, ding yong-kun, liu dong-jian, tang chang-huan, wen shu-huai, pu yi-kang. Numerical simulation of neutron penumbral imaging[J]. High Power Laser and Particle Beams, 2006, 18(07): 0- .
    [17]song jian-ming, he xiao-hai, li bo, huang ning-kang, lin li-bin. Radiation enhancing diffusion of Ar into hollow glass microsphere[J]. High Power Laser and Particle Beams, 2006, 18(03): 0- .
    [18]xu tian-rong, yang huai-min. Synthetical ionization irradiation effects of neutron and γ-ray on very large scale integrated circuit[J]. High Power Laser and Particle Beams, 2005, 17(05): 0- .
    [19]he chao-hui, geng bin, yang hai-liang, chen xiao-hua, zhang zheng-xuan, li guo-zheng. Accelerators simulation experiment on single event effects in semiconductor devices[J]. High Power Laser and Particle Beams, 2002, 14(01): 0- .
    • Supplements(0)
    • Cited By

  • Cited by

    Periodical cited type(3)

    1. 王玉才，刘艳，曹荣幸，李红霞，刘洋，郑澍，韩丹，薛玉雄. SRAM单元的单粒子效应三维敏感区形状参数模拟仿真方法. 航天器环境工程. 2023(06): 622-629 .
    2. 温景超，李旭红，吴立强，王宇，何忠名. 基于三维模型的InGaP/GaAs HBT单粒子效应仿真. 电子元件与材料. 2020(04): 90-94 .
    3. 薛茜男，张道阳，李颖，芦浩，王鹏. 航空高度FPGA单粒子翻转飞行实验及失效分析. 强激光与粒子束. 2016(12): 84-90 . 本站查看

    Other cited types(7)

  • Created with Highcharts 5.0.7Amount of accessChart context menuAbstract Views, HTML Views, PDF Downloads StatisticsAbstract ViewsHTML ViewsPDF Downloads2024-052024-062024-072024-082024-092024-102024-112024-122025-012025-022025-032025-0401020304050
    Created with Highcharts 5.0.7Chart context menuAccess Class DistributionFULLTEXT: 14.9 %FULLTEXT: 14.9 %META: 82.2 %META: 82.2 %PDF: 2.9 %PDF: 2.9 %FULLTEXTMETAPDF
    Created with Highcharts 5.0.7Chart context menuAccess Area Distribution其他: 3.5 %其他: 3.5 %其他: 0.2 %其他: 0.2 %China: 0.6 %China: 0.6 %Germany: 0.2 %Germany: 0.2 %India: 0.1 %India: 0.1 %Seongnam-si: 0.2 %Seongnam-si: 0.2 %United States: 0.3 %United States: 0.3 %[]: 0.3 %[]: 0.3 %上海: 0.8 %上海: 0.8 %东莞: 0.7 %东莞: 0.7 %中山: 0.1 %中山: 0.1 %丽水: 0.1 %丽水: 0.1 %兰州: 0.1 %兰州: 0.1 %内江: 0.1 %内江: 0.1 %北京: 23.8 %北京: 23.8 %十堰: 0.2 %十堰: 0.2 %南京: 0.2 %南京: 0.2 %南通: 0.1 %南通: 0.1 %台州: 0.1 %台州: 0.1 %合肥: 0.1 %合肥: 0.1 %周口: 0.1 %周口: 0.1 %哈尔滨: 0.1 %哈尔滨: 0.1 %哥伦布: 0.2 %哥伦布: 0.2 %嘉兴: 0.1 %嘉兴: 0.1 %嘉峪关: 0.1 %嘉峪关: 0.1 %天津: 0.5 %天津: 0.5 %宁波: 0.1 %宁波: 0.1 %宣城: 0.1 %宣城: 0.1 %常州: 0.1 %常州: 0.1 %广州: 0.3 %广州: 0.3 %弗吉尼亚州: 0.1 %弗吉尼亚州: 0.1 %张家口: 0.4 %张家口: 0.4 %成都: 0.2 %成都: 0.2 %扬州: 0.2 %扬州: 0.2 %新乡: 0.1 %新乡: 0.1 %无锡: 0.1 %无锡: 0.1 %晋城: 0.1 %晋城: 0.1 %普洱: 0.1 %普洱: 0.1 %杭州: 0.8 %杭州: 0.8 %桃园: 0.1 %桃园: 0.1 %武汉: 0.3 %武汉: 0.3 %沈阳: 0.1 %沈阳: 0.1 %洛阳: 0.1 %洛阳: 0.1 %济宁: 0.1 %济宁: 0.1 %淄博: 0.2 %淄博: 0.2 %深圳: 0.4 %深圳: 0.4 %温州: 0.1 %温州: 0.1 %渭南: 0.2 %渭南: 0.2 %湖州: 0.1 %湖州: 0.1 %湘潭: 0.3 %湘潭: 0.3 %漯河: 0.9 %漯河: 0.9 %珠海: 0.2 %珠海: 0.2 %石家庄: 0.1 %石家庄: 0.1 %秦皇岛: 0.1 %秦皇岛: 0.1 %绵阳: 0.1 %绵阳: 0.1 %芒廷维尤: 18.3 %芒廷维尤: 18.3 %芝加哥: 0.4 %芝加哥: 0.4 %苏州: 0.6 %苏州: 0.6 %蚌埠: 0.1 %蚌埠: 0.1 %西宁: 39.3 %西宁: 39.3 %西安: 1.3 %西安: 1.3 %贵阳: 0.2 %贵阳: 0.2 %赫米特: 0.1 %赫米特: 0.1 %达州: 0.1 %达州: 0.1 %运城: 0.1 %运城: 0.1 %连云港: 0.1 %连云港: 0.1 %郑州: 0.8 %郑州: 0.8 %重庆: 0.1 %重庆: 0.1 %镇江: 0.1 %镇江: 0.1 %长沙: 0.2 %长沙: 0.2 %阳泉: 0.1 %阳泉: 0.1 %青岛: 0.1 %青岛: 0.1 %鞍山: 0.1 %鞍山: 0.1 %首尔特别: 0.2 %首尔特别: 0.2 %其他其他ChinaGermanyIndiaSeongnam-siUnited States[]上海东莞中山丽水兰州内江北京十堰南京南通台州合肥周口哈尔滨哥伦布嘉兴嘉峪关天津宁波宣城常州广州弗吉尼亚州张家口成都扬州新乡无锡晋城普洱杭州桃园武汉沈阳洛阳济宁淄博深圳温州渭南湖州湘潭漯河珠海石家庄秦皇岛绵阳芒廷维尤芝加哥苏州蚌埠西宁西安贵阳赫米特达州运城连云港郑州重庆镇江长沙阳泉青岛鞍山首尔特别

Catalog

    通讯作者: 陈斌, bchen63@163.com
    • 1. 

      沈阳化工大学材料科学与工程学院 沈阳 110142

    1. 本站搜索
    2. 百度学术搜索
    3. 万方数据库搜索
    4. CNKI搜索
    Get Citation
    PDF
    XML
    Article views (2022) PDF downloads(532) Cited by(10)
    Proportional views
    Related

    Copyright © 2014 Science and Technology Information Center of China Academy of Engineering Physics 蜀ICP备11018116号-4

    Mailing Address: Box 805, box 919, Mianyang, Sichuan (621900) Address: Science and Technology Information Center of Science City, Youxian District, Mianyang City, Sichuan Province Tel: 0816-2485753

    Fax: 0816-2483701 Email: HPLPB@caep.cn

    Supported by: Beijing Renhe Information Technology Co. Ltd  support: info@rhhz.net

    /

    DownLoad:  Full-Size Img  PowerPoint
    Return
    Return