Zhao Zhenguo, Zhou Haijing, Ma Hongge, et al. Influence of frequency and microwave repetition rate on thermal damage process of PIN limiter[J]. High Power Laser and Particle Beams, 2015, 27: 103239. doi: 10.11884/HPLPB201527.103239
Citation:
Zhao Zhenguo, Zhou Haijing, Ma Hongge, et al. Influence of frequency and microwave repetition rate on thermal damage process of PIN limiter[J]. High Power Laser and Particle Beams, 2015, 27: 103239. doi: 10.11884/HPLPB201527.103239
Zhao Zhenguo, Zhou Haijing, Ma Hongge, et al. Influence of frequency and microwave repetition rate on thermal damage process of PIN limiter[J]. High Power Laser and Particle Beams, 2015, 27: 103239. doi: 10.11884/HPLPB201527.103239
Citation:
Zhao Zhenguo, Zhou Haijing, Ma Hongge, et al. Influence of frequency and microwave repetition rate on thermal damage process of PIN limiter[J]. High Power Laser and Particle Beams, 2015, 27: 103239. doi: 10.11884/HPLPB201527.103239
Based on the PIN limiter circuit /device physics mixed mode model, considering the high electric field and high temperature devices multi-physical features under high-power microwave, we simulate the influence of frequency and microwave pulse repetition rate on thermal damage process of PIN limiter. Numerical simulation results show that different frequency microwave pulses damaging the PIN limiter exist a turning point frequency. Microwave pulses near the turning point frequency require more energy or pulse width to damage the device. After one pulse function on the device, the peak temperature of the device declines fast and it is similar to negative exponent relationship. It is easier when the device is in a high temperature. Heat accumulation effect makes it easier on damaging PIN limiter than the single pulse microwave.