Yang Shanchao, Qi Chao, Liu Yan, et al. Review of neutron induced single event effects on semiconductor devices[J]. High Power Laser and Particle Beams, 2015, 27: 110201. doi: 10.11884/HPLPB201527.110201
Citation:
Yang Shanchao, Qi Chao, Liu Yan, et al. Review of neutron induced single event effects on semiconductor devices[J]. High Power Laser and Particle Beams, 2015, 27: 110201. doi: 10.11884/HPLPB201527.110201
Yang Shanchao, Qi Chao, Liu Yan, et al. Review of neutron induced single event effects on semiconductor devices[J]. High Power Laser and Particle Beams, 2015, 27: 110201. doi: 10.11884/HPLPB201527.110201
Citation:
Yang Shanchao, Qi Chao, Liu Yan, et al. Review of neutron induced single event effects on semiconductor devices[J]. High Power Laser and Particle Beams, 2015, 27: 110201. doi: 10.11884/HPLPB201527.110201
A review of neutron induced single event effects (SEE) on semiconductor devices is presented, with emphasis on research progress with Xian Pulsed Reactor in Northwest Institute of Nuclear Technology. Comparison of steady and pulsed neutron induced SEE is presented. The physical mechanism of increasing susceptibility of SRAM-based integrated circuits with feature size scaling down is analyzed. For CMOS LSI with sub-micron feature size, neutron induced SEE has become the dominant radiation damage mechanism under neutron irradiation. Future work should pay more attention to neutron induced SEE besides displacement damage effects.
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