Volume 27 Issue 11
Nov.  2015
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Article Navigation >  High Power Laser and Particle Beams  > 2015  >  27(11): 114002
Li Jia, Zhao Quantang, Ran Zhaohui, et al. Design and beam dynamic analysis of 270° achromatic deflection magnet system[J]. High Power Laser and Particle Beams, 2022, 34: 124002. doi: 10.11884/HPLPB202234.220180
Citation: Wang Chenhui, Chen Wei, Liu Yan, et al. Influence of base surface potential on neutron displacement damage of gate-controlled lateral PNP bipolar transistors[J]. High Power Laser and Particle Beams, 2015, 27: 114002. doi: 10.11884/HPLPB201527.114002
shu

Influence of base surface potential on neutron displacement damage of gate-controlled lateral PNP bipolar transistors

doi: 10.11884/HPLPB201527.114002
  • 1.

    State Key Laboratory of Intense Pulsed Radiation Simulation and Effect Northwest Institute of Nuclear Technology,Xi’an 710024,China

  • Received Date: 2015-07-14
  • Rev Recd Date: 2015-08-20
  • Publish Date: 2015-10-27
    Abstract
  • A gate-controlled lateral PNP bipolar transistor has been manufactured by means of depositing a gate electrode on the oxide layer above the active base region of the conventional lateral PNP bipolar transistor, whose base surface potential can be adjusted by changing the bias condition of the gate. Neutron radiation effect experiments have been accomplished on the gate-controlled lateral PNP bipolar transistors whose bias voltage of the gate is zero, -10 V and 10 V respectively to investigate the influence of base surface potential on neutron displacement degradation rate. The experiments have been performed at Xian pulsed reactor and the neutron fluence is 21012, 41012, 61012, 81012, 11013 cm-2, respectively. The results indicate that the increased base surface potential makes the change of the reciprocal of the common emitter current gain degrade with neutron fluence more rapidly and the decreased base surface potential has no obvious influence on the degradation rate.
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