Liu Xuan, Kong Long, Wang Yarong, et al. Laser-induced SWCNTs-Al thin film and field emission property[J]. High Power Laser and Particle Beams, 2015, 27: 124103. doi: 10.11884/HPLPB201527.124103
Citation:
Liu Xuan, Kong Long, Wang Yarong, et al. Laser-induced SWCNTs-Al thin film and field emission property[J]. High Power Laser and Particle Beams, 2015, 27: 124103. doi: 10.11884/HPLPB201527.124103
Liu Xuan, Kong Long, Wang Yarong, et al. Laser-induced SWCNTs-Al thin film and field emission property[J]. High Power Laser and Particle Beams, 2015, 27: 124103. doi: 10.11884/HPLPB201527.124103
Citation:
Liu Xuan, Kong Long, Wang Yarong, et al. Laser-induced SWCNTs-Al thin film and field emission property[J]. High Power Laser and Particle Beams, 2015, 27: 124103. doi: 10.11884/HPLPB201527.124103
The single-walled carbon nanotubes-Al (SWCNTs-Al) thin film is successfully fabricated by combining the electrophoretic deposition and laser nanowelding technology at room temperature. First, the single-walled carbon nanotubes are deposited onto an Al substrate by electrophoretic deposition, and then a reliable connection is constructed between them by pico-second pulsed laser. The field emission performance test results of the SWCNTs-Al thin film show that the turn-on voltage decreases from 5.1 V/m to 2.1 V/m, and the emission current increases significantly and becomes more stable. This is mainly due to the reduction of contact resistance in welding area and easily moving electrons for field emission after laser nanowelding. Based on the surface topography and the field emission property testing results of the SWCNTs-Al thin film, the optimal laser nanowelding parameters are determined, which are important for the development of nanowelding technology and the large-scale production of nano-devices with ultra-high performance.