4H-SiC photoconductive switch with low on-state resistance

4H-SiC photoconductive switches with a lateral geometry are fabricated. Phosphate ion implantation is adopted to decrease the resistance. The results show that phosphate ion implantation can effectively reduce the resistance nearing the electrode and the minimum unit of the electrode gap on-state resistance is 3.17 / mm. This experiment shows the bias voltage and optical pulse energy how to effect the on-state resistance. The power of the device is more than 2.0 MW when the bias voltage is 10 kV and the energy of light is 30.5 mJ. The characteristics of the switch output are stable, low jitter and high power. This is of importance to the application of silicon carbide photoconductive switch.