Volume 28 Issue 02
Jan.  2016
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Article Navigation >  High Power Laser and Particle Beams  > 2016  >  28(02): 023102
Lei Chunxia, Ren Yunpeng, Gan Yong, et al. Effect of optical properties on the thermal responses of copper films induced by ultrafast lasers[J]. High Power Laser and Particle Beams, 2017, 29: 071006. doi: 10.11884/HPLPB201729.170017
Citation: Liu Jie, Zhang Jian, Jiang Jun, et al. Design of D-band power amplifier[J]. High Power Laser and Particle Beams, 2016, 28: 023102. doi: 10.11884/HPLPB201628.023102
shu

Design of D-band power amplifier

doi: 10.11884/HPLPB201628.023102
  • 1.

    Microsystem and Terahertz Research Center,Institute of Electronic Engineering,CAEP,Mianyang 621900,China

  • Received Date: 2015-09-04
  • Rev Recd Date: 2015-11-02
  • Publish Date: 2016-02-15
    Abstract
  • This paper presents D-band SiGe power amplifier(PA) developed by using the 0.13 m SiGe BiCMOS technology. Building blocks of a 4-way amplifier are implemented using three-stage cascode power amplifier units, and T-junction networks are used for power combining and splitting. The PA chip works in 125-150 GHz, and achieves a small-signal biggest gain of 21 dB at 131 GHz, with a small-signal lowest gain of 17 dB at 150 GHz. The PA module exhibits a saturated output power of 13.6 dBm and an output 1 dB gain compression power of 12.9 dBm at 139 GHz.
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