Liu Jie, Zhang Jian, Jiang Jun, et al. Design of D-band power amplifier[J]. High Power Laser and Particle Beams, 2016, 28: 023102. doi: 10.11884/HPLPB201628.023102
Citation:
Liu Jie, Zhang Jian, Jiang Jun, et al. Design of D-band power amplifier[J]. High Power Laser and Particle Beams, 2016, 28: 023102. doi: 10.11884/HPLPB201628.023102
Liu Jie, Zhang Jian, Jiang Jun, et al. Design of D-band power amplifier[J]. High Power Laser and Particle Beams, 2016, 28: 023102. doi: 10.11884/HPLPB201628.023102
Citation:
Liu Jie, Zhang Jian, Jiang Jun, et al. Design of D-band power amplifier[J]. High Power Laser and Particle Beams, 2016, 28: 023102. doi: 10.11884/HPLPB201628.023102
This paper presents D-band SiGe power amplifier(PA) developed by using the 0.13 m SiGe BiCMOS technology. Building blocks of a 4-way amplifier are implemented using three-stage cascode power amplifier units, and T-junction networks are used for power combining and splitting. The PA chip works in 125-150 GHz, and achieves a small-signal biggest gain of 21 dB at 131 GHz, with a small-signal lowest gain of 17 dB at 150 GHz. The PA module exhibits a saturated output power of 13.6 dBm and an output 1 dB gain compression power of 12.9 dBm at 139 GHz.
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