Nonlinear analysis of diode detector in THz based on Ritz-Galerkin method

Tian Yaoling; Liu Jie; Jiang Jun; Lu Bin; Deng Xianjin

doi:10.11884/HPLPB201628.023103

Volume 28 Issue 02

Jan. 2016

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Tian Yaoling, Liu Jie, Jiang Jun, et al. Nonlinear analysis of diode detector in THz based on Ritz-Galerkin method[J]. High Power Laser and Particle Beams, 2016, 28: 023103. doi: 10.11884/HPLPB201628.023103

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Nonlinear analysis of diode detector in THz based on Ritz-Galerkin method

doi: 10.11884/HPLPB201628.023103

Tian Yaoling^1,2,
Liu Jie^1,2,
Jiang Jun^1,2,
Lu Bin^1,2,
Deng Xianjin^{1,2
,
,}

1.
Institute of Electronic Engineering,CAEP,P.O.Box 919-1015,Mianyang 621900,China;
2.
Microsystem and Terahertz Research Center,CAEP,Chengdu 610200,China

Received Date: 2015-08-25
Rev Recd Date: 2015-11-04
Publish Date: 2016-02-15

Abstract

Abstract

Schottky diode detector is one of the key devices of THz wireless communication system. In order to make further research on the nonlinear characteristic of a Schottky diode detector (SBD), a model was established based on Ritz-Galerkin method. Meanwhile, the model has been used to predict the output and the sensitivity of the detector, which indicates this model can precisely predict the performance of the detector. Finally, the influences of the power levels, load resistance and temperature on nonlinearity behavior of the SBD in 0.34 THz were investigated by this model, which indicates that the diode detectors exhibit true square-law to a linear law with an increase of power level is correct only under restrictive conditions, and that slopes corresponding to higher-order effect can be easily encountered in practical situations.
- Ritz-Galerkin,
- Schottky diode,
- nonlinear,
- terahertz

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