Huang Zhijuan, Liu Meiqin, Gong Ding, et al. High power microwave effect of electrostatic discharge type GGMOS protection device[J]. High Power Laser and Particle Beams, 2016, 28: 033024. doi: 10.11884/HPLPB201628.033024
Citation:
Huang Zhijuan, Liu Meiqin, Gong Ding, et al. High power microwave effect of electrostatic discharge type GGMOS protection device[J]. High Power Laser and Particle Beams, 2016, 28: 033024. doi: 10.11884/HPLPB201628.033024
Huang Zhijuan, Liu Meiqin, Gong Ding, et al. High power microwave effect of electrostatic discharge type GGMOS protection device[J]. High Power Laser and Particle Beams, 2016, 28: 033024. doi: 10.11884/HPLPB201628.033024
Citation:
Huang Zhijuan, Liu Meiqin, Gong Ding, et al. High power microwave effect of electrostatic discharge type GGMOS protection device[J]. High Power Laser and Particle Beams, 2016, 28: 033024. doi: 10.11884/HPLPB201628.033024
College of Electronic and Information Engineering,Key Laboratory for Physical Electronics and Devices of the Ministry of Education,Xi’an Jiaotong University,Xi’an 710049,China;
2.
Suzhou Ke Jingda Electronic Co Ltd,Suzhou 215021,China;
3.
Northwest Institute of Nuclear Technology,Xi’an 710024,China
The response of MOSFET to HPM is numerically studied by a simulator based on semiconductor drift-diffusion model. The response characteristics of ESD device under the action of HPM and the physical image of the device are simulated. The results of numerical simulation show that the amplitude and the frequency of the HPM signal are the factors that affect the ESD device, and the maximum temperature and the signal amplitude are positive exponential relationship with the HPM pulse width of the 30ns pulse. When the HPM signal is injected into the same amplitude ESD signal, the larger the frequency is, the longer the device can achieve the failure temperature. The results of this paper can provide a theoretical reference for the research of the damage mechanism of MOS device and the reinforcement design of the HPM device.
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