Parameter extraction of transient voltage suppressor diode

Building a physical semiconductor model is a technical difficulty in numerical simulation of EMP effect on semiconductor device. As an example, one type TVS diode is tested to obtain parameters for model building. Area and depth of PN junction are obtained by X-ray imaging, SEM scanning and doping impurity staining. Breakdown voltage and capacitance curve of the diode are surveyed and be used for educing doping concentration of the diode combining with numerical results. The semiconductor model of this type diode is built by using parameters from this test, and is used for numerical simulation. Numerical result tallies with the test. This test method can be used in PN junction modeling, and can be referenced for modeling of other device. It could be applied in HPM effect numerical study.