Fu Wenting, Liang Qiao, Cui Kefu, et al. Optimization of silicon etching process using response surface method[J]. High Power Laser and Particle Beams, 2016, 28: 064109. doi: 10.11884/HPLPB201628.064109
Citation:
Fu Wenting, Liang Qiao, Cui Kefu, et al. Optimization of silicon etching process using response surface method[J]. High Power Laser and Particle Beams, 2016, 28: 064109. doi: 10.11884/HPLPB201628.064109
Fu Wenting, Liang Qiao, Cui Kefu, et al. Optimization of silicon etching process using response surface method[J]. High Power Laser and Particle Beams, 2016, 28: 064109. doi: 10.11884/HPLPB201628.064109
Citation:
Fu Wenting, Liang Qiao, Cui Kefu, et al. Optimization of silicon etching process using response surface method[J]. High Power Laser and Particle Beams, 2016, 28: 064109. doi: 10.11884/HPLPB201628.064109
In this paper, the response surface methodology(RSM) is applied to optimizing the operating conditions of silicon etching for pressure sensor fabrication. Three operating parameters, the temperature, the KOH concentration and the etching time are considered in this study, and the ranges of them are 40-60℃, 0.4-0.48 mol/L and 5-12.5 h, respectively. A quadratic model is established to describe the anisotropic etching rate as the response value, and the individual effects of these operating parameters and the combined effects of multiple operating conditions on etching rate are examined.
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