Responsivity of femtosecond-laser microstructured silicon photodiodes

Li Yuan; Feng Guojin; Zhao Li

doi:10.11884/HPLPB201628.160073

Volume 28 Issue 11

Oct. 2016

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Article Navigation > High Power Laser and Particle Beams > 2016 > 28(11): 111003

Zhang Yushuang, Wang Rui, Su Hua, et al. A new approach for real-time imaging from laser beam to complex targets[J]. High Power Laser and Particle Beams, 2023, 35: 101004. doi: 10.11884/HPLPB202335.230063

Citation:

Li Yuan, Feng Guojin, Zhao Li. Responsivity of femtosecond-laser microstructured silicon photodiodes[J]. High Power Laser and Particle Beams, 2016, 28: 111003. doi: 10.11884/HPLPB201628.160073

Citation:

Li Yuan, Feng Guojin, Zhao Li. Responsivity of femtosecond-laser microstructured silicon photodiodes[J]. High Power Laser and Particle Beams, 2016, 28: 111003. doi: 10.11884/HPLPB201628.160073

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Responsivity of femtosecond-laser microstructured silicon photodiodes

doi: 10.11884/HPLPB201628.160073

1.
Department of Physics and Electronic Engineering,Yuncheng University,Yuncheng 044000,China;
2.
Optic and Laser Division,National Institute of Metrology,Beijing 100013,China;
3.
State Key Laboratory of Surface Physics and Department of Physics,Fudan University,Shanghai 200433,China

Received Date: 2016-03-09
Rev Recd Date: 2016-07-15
Publish Date: 2016-11-15

Abstract

Abstract

We investigated responsivity of photodiodes fabricated with silicon that was microstructured by femtosecond-laser pulses in a sulfur-containing atmosphere. In different temperature annealing, the aluminum electrodes were prepared using the electron evaporation method according to different spike height of microstructured silicon. The femtosecond laser microstructured photodiodes were made, and the opto-electronic responsivities of photodiodes was measured. Test results show that the responsivity of photodiodes depends on the height of spikes and annealing temperature, the responsivity can be as high as 0.55 A/W. For wavelengths of 1100 nm below the bandgap we obtained responsivities about 0.4 A/W, which is higher than that for standard silicon photodiodes.
- microstructured silicon by femtosecond-laser,
- photodiodes,
- opto-electronic responsivity,
- annealing,
- height of spikes

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