Thermal boundary conditions in multiphysics algorithm for semiconductor device simulation

Wang Hao; Shi Feng; Zhu Hongwei; Chen Xing

doi:10.11884/HPLPB201628.160129

Volume 28 Issue 11

Oct. 2016

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Article Navigation > High Power Laser and Particle Beams > 2016 > 28(11): 113202

Yang Jinwen, Yi Tao, Li Tingshuai, et al. Electromagnetic pulse characteristic in process of laser shooting[J]. High Power Laser and Particle Beams, 2015, 27: 103224. doi: 10.11884/HPLPB201527.103224

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Wang Hao, Shi Feng, Zhu Hongwei, et al. Thermal boundary conditions in multiphysics algorithm for semiconductor device simulation[J]. High Power Laser and Particle Beams, 2016, 28: 113202. doi: 10.11884/HPLPB201628.160129

Yang Jinwen, Yi Tao, Li Tingshuai, et al. Electromagnetic pulse characteristic in process of laser shooting[J]. High Power Laser and Particle Beams, 2015, 27: 103224. doi: 10.11884/HPLPB201527.103224

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Thermal boundary conditions in multiphysics algorithm for semiconductor device simulation

doi: 10.11884/HPLPB201628.160129

1.
School of Physics and Electronic Information Engineering,Henan Polytechnic University,Jiaozuo 454000,China;
2.
College of Electronics and Information Engineering,Sichuan University,Chengdu 610065,China

Received Date: 2016-05-05
Rev Recd Date: 2016-06-16
Publish Date: 2016-11-15

Abstract

Abstract

The multiphysics algorithm in this paper is based on semiconductors physical model to realize the simulation of electromagnetic effects on semiconductor devices and circuits. The model is constituted of a set of partial differential equations, including electromagnetic equations, semiconductor physics and thermal equations. For accurately simulating temperature distributions in semiconductor devices, the thermal boundary conditions are researched in this paper. A commercial Schottky diode with model number HSMS-282c is excited by a 2 V step pulse generator. Its temperature variation under different thermal boundary conditions are compared. The diodes surface temperature under different forward voltage is also measured and compared with the simulation result. The results show that the temperature of semiconductor devices can be accurately simulated by the multiphysics algorithm with convection boundary condition.
- semiconductor,
- circuit,
- multiphysics,
- thermal boundary condition,
- simulation

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