Wang Yuhang, Gao Yang, Han Bin, et al. In-situ sputtering type single-try discriminator circuit[J]. High Power Laser and Particle Beams, 2016, 28: 114101. doi: 10.11884/HPLPB201628.160140
Citation:
Wang Yuhang, Gao Yang, Han Bin, et al. In-situ sputtering type single-try discriminator circuit[J]. High Power Laser and Particle Beams, 2016, 28: 114101. doi: 10.11884/HPLPB201628.160140
Wang Yuhang, Gao Yang, Han Bin, et al. In-situ sputtering type single-try discriminator circuit[J]. High Power Laser and Particle Beams, 2016, 28: 114101. doi: 10.11884/HPLPB201628.160140
Citation:
Wang Yuhang, Gao Yang, Han Bin, et al. In-situ sputtering type single-try discriminator circuit[J]. High Power Laser and Particle Beams, 2016, 28: 114101. doi: 10.11884/HPLPB201628.160140
As the structure of discriminator in the current micro-electromechanical system combination lock is complex and the reliability of electronic combination locks is poor, we designed an N bit in-situ sputtering single-try discrimination circuit to solve these problems. The N bit discrimination circuit is composed of 2N (N-stage, two switches per stage) sputtering type OFF-ON switches and formed by alternative logic of each stage and N-stage series. The sputtering type OFF-ON switches (the one-way switch of the OFF state to ON state is irreversible) and the fuse having a fusing characteristic are connected by the corresponding relationship between setting password and the circuit to form in-situ sputtering and single-try solid combination lock which can be used in high security key systems and facilities. In order to ensure a space between the metal exploding foil and the interdigital electrode, three different micromachining process methods of the discrimination circuit are presented.