Narrow-band Si/Mo/C multilayer mirrors working at 13 nm

Yi Qiang; Huang Qiushi; Wang Xiangmei; Yang Yang; Zhang Zhong; Wang Zhanshan; Xu Rongkun; Peng Taiping; Zhou Hongjun; Huo Tonglin

doi:10.11884/HPLPB201628.160440

Volume 28 Issue 12

Nov. 2016

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Article Navigation > High Power Laser and Particle Beams > 2016 > 28(12): 122002

Yi Qiang, Huang Qiushi, Wang Xiangmei, et al. Narrow-band Si/Mo/C multilayer mirrors working at 13 nm[J]. High Power Laser and Particle Beams, 2016, 28: 122002. doi: 10.11884/HPLPB201628.160440

Citation:

Yi Qiang, Huang Qiushi, Wang Xiangmei, et al. Narrow-band Si/Mo/C multilayer mirrors working at 13 nm[J]. High Power Laser and Particle Beams, 2016, 28: 122002. doi: 10.11884/HPLPB201628.160440

Yi Qiang, Huang Qiushi, Wang Xiangmei, et al. Narrow-band Si/Mo/C multilayer mirrors working at 13 nm[J]. High Power Laser and Particle Beams, 2016, 28: 122002. doi: 10.11884/HPLPB201628.160440

Citation:

Yi Qiang, Huang Qiushi, Wang Xiangmei, et al. Narrow-band Si/Mo/C multilayer mirrors working at 13 nm[J]. High Power Laser and Particle Beams, 2016, 28: 122002. doi: 10.11884/HPLPB201628.160440

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Narrow-band Si/Mo/C multilayer mirrors working at 13 nm

doi: 10.11884/HPLPB201628.160440

1.
Institute of Nuclear Physics and Chemistry,CAEP,Mianyang 621900,China;
2.
Key Laboratory of Advanced Micro-Structured Materials MOE,Institute of Precision Optical Engineering,School of Physics Science and Engineering,Tongji University,Shanghai 200092,China;
3.
National Synchrotron Radiation Laboratory,University of Science and Technology of China,Hefei 230029,China

Received Date: 2016-09-02
Rev Recd Date: 2016-10-08
Publish Date: 2016-12-15

Abstract

Abstract

A multi-energy-point emission spectrum measurement system can be implemented on primary test stand (PTS) facility based on multilayer covering from 50 eV to 1500 eV quasi monochromatically. The information of spectrum structure and total energy of this Z-pinch plasma X-ray radiation source can be obtained from this system. The multilayer working at 13 nm is required to operate under a grazing incidence angle of 60 given the facility condition. The highest reflectivity can be achieved by the conventional Mo/Si multilayer, but it will display a large bandwidth, which cannot satisfy the quasi-monochromatic requirement for the multilayer. This paper proposes that taking Mo and C together as the absorbing materials to combine with Si to form Si/Mo/C multilayer, which can significantly reduce the bandwidth with a slight decrease of the reflectivity. This kind of Si/Mo/C multilayer was fabricated by direct current magnetron sputtering technique. The grazing incidence X-ray reflectivity (GIXR) has shown the multilayer with a clear and complete structure. The EUV reflectivity measurement at the synchrotron radiation light source has demonstrated this Si/Mo/C multilayer with a reflectivity of 56.5% and a bandwidth of 0.49 nm (3.7 eV).
- multilayer,
- Mo/Si,
- Si/Mo/C,
- Z-pinch,
- spectrum diagnostics,
- reflectivity,
- bandwidth

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