Li Xiqin, Wu Hongguang, Luan Chongbiao, et al. Design of nanosecond all-solid-state pulse source based on MOSFET semiconductor switch[J]. High Power Laser and Particle Beams, 2017, 29: 045002. doi: 10.11884/HPLPB201729.160475
Citation:
Li Xiqin, Wu Hongguang, Luan Chongbiao, et al. Design of nanosecond all-solid-state pulse source based on MOSFET semiconductor switch[J]. High Power Laser and Particle Beams, 2017, 29: 045002. doi: 10.11884/HPLPB201729.160475
Li Xiqin, Wu Hongguang, Luan Chongbiao, et al. Design of nanosecond all-solid-state pulse source based on MOSFET semiconductor switch[J]. High Power Laser and Particle Beams, 2017, 29: 045002. doi: 10.11884/HPLPB201729.160475
Citation:
Li Xiqin, Wu Hongguang, Luan Chongbiao, et al. Design of nanosecond all-solid-state pulse source based on MOSFET semiconductor switch[J]. High Power Laser and Particle Beams, 2017, 29: 045002. doi: 10.11884/HPLPB201729.160475
This paper designs a all-solid-state pulse source with the output capability of repetition frequency and fast rise time, using MOSFET semiconductor switch instead of spark gap switch as primary discharge switch and power diode instead of charging resistor to reduce power dissipation. The pulse source has five stages, each stage includes 5 MOSFETs, which are triggered by a pulsed isolated transformer. Under repetition frequency 1 Hz-1 kHz, charge voltage 4-5 kV and load resistor 1 k, the pulse source can output a high voltage pulse with amplitude more than 20 kV, rise time less than 10 ns, pulse width more than 100 ns. The paper gives the experimental results of output high voltage pulses with repetition frequency of 1Hz and 1 kHz, which verify the feasibility of design principle and method.