Simulation analysis of strong electromagnetic pulse rise time on damage threshold of RS flip-flop

This paper investigates the thermal run away mechanism of metal oxide semiconductor field effect transistors (MOSFETs) in RS triggers. Simulations are performed to study the RS trigger damage threshold under different gate input and rising time, and the internal temperature distribution is plotted. Through the analysis, this paper concludes that the strong electromagnetic pulses with longer rise time should have higher peak intensity and longer time to damage RS triggers.