Rao Junfeng, Ding Jialin, Li Zi, et al. Design of semi-floating-gate transistor square wave pulsating Marx power source[J]. High Power Laser and Particle Beams, 2017, 29: 105005. doi: 10.11884/HPLPB201729.170069
Citation:
Rao Junfeng, Ding Jialin, Li Zi, et al. Design of semi-floating-gate transistor square wave pulsating Marx power source[J]. High Power Laser and Particle Beams, 2017, 29: 105005. doi: 10.11884/HPLPB201729.170069
Rao Junfeng, Ding Jialin, Li Zi, et al. Design of semi-floating-gate transistor square wave pulsating Marx power source[J]. High Power Laser and Particle Beams, 2017, 29: 105005. doi: 10.11884/HPLPB201729.170069
Citation:
Rao Junfeng, Ding Jialin, Li Zi, et al. Design of semi-floating-gate transistor square wave pulsating Marx power source[J]. High Power Laser and Particle Beams, 2017, 29: 105005. doi: 10.11884/HPLPB201729.170069
In order to obtain high current high frequency square wave pulse used in industry, we analyzed and improved the semiconductor full controlled Marx, in charge of the implementation and truncated function. Using the new semi-floating-gate SFGT transistor structure as main switch, the design can produce kV high voltage, high current and high frequency square wave pulse. At the same time, the circuit structure is optimized, and the stability of DC power supply to the pulse power supply is also optimized. The main work of this paper is as follows: first, we develop a square wave pulse generator with current 100 A, frequency 4 kHz, pulse width 4 s, 6 kV negative high voltage and rising edge falling in 80 ns. Second, study the SFGT core isolation of the corresponding driving circuit with half bridge SFGT grid parallel independent capacitance isolation drive and IR2110 drive circuit, the equivalent circuit of half bridge gate and the MOS tube was analyzed, with strong anti-interference ability and wide pulse width modulation characteristics.