Influence of Ⅰ layer thickness on thermal damage process of PIN limiter

Based on the device physics simulation, we studied the microwave pulse thermal process of the PIN limiter diode, and the devices 2D multi-physical field model was established with software Sentaurus-TCAD. The peak temperature change of different thickness of Ⅰ layer was analyzed under injections of 5.3,7.5 and 9.4 GHz microwave signals. Simulation results show that the influence of Ⅰ layer thickness on thermal process of PIN diode divides into two stages, before the turning point, the peak temperature changes with the increasing of Ⅰ layer thickness, after the point the peak temperature decreases with the increasing of Ⅰ layer thickness. The influence of microwave pulse frequency on the turning point is not obvious.