Modulation system and modulation characteristics of high power semiconductor laser

Wang Weipeng; Xu Yingtian; Zou Yonggang; Xu Li; Zhang He; Jin Liang; Li Yang; Zhao Xin; Ma Xiaohui

doi:10.11884/HPLPB201729.170107

Volume 29 Issue 10

Oct. 2017

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Article Navigation > High Power Laser and Particle Beams > 2017 > 29(10): 101001

Yuan Mingquan, Yang He, Zhang Zhaoyun, et al. Fabrication of flexible graphene strain sensor based on PET substrate[J]. High Power Laser and Particle Beams, 2018, 30: 034101. doi: 10.11884/HPLPB201830.170423

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Wang Weipeng, Xu Yingtian, Zou Yonggang, et al. Modulation system and modulation characteristics of high power semiconductor laser[J]. High Power Laser and Particle Beams, 2017, 29: 101001. doi: 10.11884/HPLPB201729.170107

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Modulation system and modulation characteristics of high power semiconductor laser

doi: 10.11884/HPLPB201729.170107

1.
State Key Laboratory on High Power Semiconductor Lasers,Changchun University of Science and Technology,Changchun 130022,China

Received Date: 2017-04-05
Rev Recd Date: 2017-06-16
Publish Date: 2017-10-15

Abstract

Abstract

In this paper, we studied the factors that affect the high frequency modulation performance of semiconductor laser in the process of direct modulation. The equivalent circuit model of LD is derived from the rate equation of semiconductor laser, which was established by using PSpice. We analyzed the effects of the parasitic parameters, the DC bias and the current modulation intensity on modulation characteristics of the laser, and put forward the corresponding methods to improve the performance of modulation. We designed a direct modulation system of semiconductor laser and simulated the system by OrCAD/PSpice. This system can output modulation semiconductor laser with frequency of 1 MHz and average power of 1.1 W.
- semiconductor laser,
- modulation,
- PSpice,
- parasitic parameter,
- equivalent circuit

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