Simulation of intense electron beam time-dependent energy deposition on anode target of high-current diode

This paper presents a new method to obtain the time-dependent electron beam energy deposition at different anode target position. First, the electron beam energy should be discrete according to diode working time, so that the electron beam in each time period is considered to have one single energy value. Then the energy deposition profile at this position can be calculated accurately by Monte Carlo method while only the incidence angle here is available. The time-dependent energy deposition characteristics in r (radial) and z (depth) directions of a weak-pinched diode working at 600 kV and 7 Ω are analyzed. The results show that the energy deposition characteristics are related to the incidence angle in the case of the energy of the electron beam is confirmed in each time period. The experimental results are in good agreement with the simulation results, the deviations are less than 10%.The energy deposition at each position of the target surface is different due to the influence of the incident energy and the incidence angle. The energy deposition profile at a designated position is also time-dependent. Under the influence of the beam pinching, the incidence angle changes greatly with time at the position more than 25 mm away from the center of the target surface. When the incidence angle is less than 40°, the peak depth of the high current electron beam energy deposition is about 0.2 mm. When the incidence angle exceeds 40°, the energy deposition peak depth is reduced to about 0.1 mm. At the positions near the center of the target surface, the influence of the beam pinching is weakened. The energy deposition characteristics of these locations are closer to the case of the deposition with small incidence angles(< 40°).