High speed IGBT gate driving circuit applied to pulsed power system

Zhu Xiaoguang; Zhang Zhengquan; Liu Qingxiang; Liu Meng; Wang Qingfeng

doi:10.11884/HPLPB201830.170330

Volume 30 Issue 1

Jan. 2018

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Zhu Xiaoguang, Zhang Zhengquan, Liu Qingxiang, et al. High speed IGBT gate driving circuit applied to pulsed power system[J]. High Power Laser and Particle Beams, 2018, 30: 015001. doi: 10.11884/HPLPB201830.170330

Citation:

Zhu Xiaoguang, Zhang Zhengquan, Liu Qingxiang, et al. High speed IGBT gate driving circuit applied to pulsed power system[J]. High Power Laser and Particle Beams, 2018, 30: 015001. doi: 10.11884/HPLPB201830.170330

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High speed IGBT gate driving circuit applied to pulsed power system

doi: 10.11884/HPLPB201830.170330

School of Physics and Technology, Southwest Jiaotong University, Chengdu 610031, China

Received Date: 2017-08-27
Rev Recd Date: 2017-10-19
Publish Date: 2018-01-15

Abstract

Abstract

Based on the performance characteristics of Insulated Gate Bipolar Translator(IGBT), a new type of switch driving circuit for pulsed power system has been designed. The switch turns on quickly with this driving circuit. The principle of this driving circuit is elaborated, and the circuit based on transformer is designed to offer gate pulses voltage as high as 60 V, so that switching speed can be improved. The driving circuit and pulse forming network are simulated by software. Meanwhile, experiment confirms this strategy using pulse forming network in Blumlein construction. By this strategy of driving, both pulse current through IGBT and the current slope are improved. Extended results of the performance of driving circuit are presented, which show that, the peak current is 470.53 A and the current slope is 9.41 A/ns at the voltage of 1 kV. The target of high-speed gate driving is achieved, and the current slope is 7.53 times the data given by the datasheet.
- IGBT,
- gate drive,
- current slope,
- planar transformer,
- pulsed power system

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References(11)

References

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