Design of 20 kV/20 kHz /100 A high voltage pulse generator

Shi Xiaoyan; Ding Enyan; Liang Qinjin; Yang Zhoubing; Zhang Yunjian

doi:10.11884/HPLPB201830.170360

Volume 30 Issue 4

Apr. 2018

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Shi Xiaoyan, Ding Enyan, Liang Qinjin, et al. Design of 20 kV/20 kHz /100 A high voltage pulse generator[J]. High Power Laser and Particle Beams, 2018, 30: 045002. doi: 10.11884/HPLPB201830.170360

Citation:

Shi Xiaoyan, Ding Enyan, Liang Qinjin, et al. Design of 20 kV/20 kHz /100 A high voltage pulse generator[J]. High Power Laser and Particle Beams, 2018, 30: 045002. doi: 10.11884/HPLPB201830.170360

Shi Xiaoyan, Ding Enyan, Liang Qinjin, et al. Design of 20 kV/20 kHz /100 A high voltage pulse generator[J]. High Power Laser and Particle Beams, 2018, 30: 045002. doi: 10.11884/HPLPB201830.170360

Citation:

Shi Xiaoyan, Ding Enyan, Liang Qinjin, et al. Design of 20 kV/20 kHz /100 A high voltage pulse generator[J]. High Power Laser and Particle Beams, 2018, 30: 045002. doi: 10.11884/HPLPB201830.170360

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Design of 20 kV/20 kHz /100 A high voltage pulse generator

doi: 10.11884/HPLPB201830.170360

Science and Technology on High Power Microwave Laboratory, Institute of Applied Electronics, CAEP, Mianyang 621900, China

Received Date: 2017-09-07
Rev Recd Date: 2017-11-27
Publish Date: 2018-04-15

Abstract

Abstract

The paper presents a design of high voltage pulse generator based on high voltage switch formed by a stack of metal oxide semiconductor field-effect transistor (MOSFET). Two pulses at both ends of out metal layer in transmission line are generated by the self-matched transmission line circuit using high voltage switch made by many opto-isolator triggering MOSFETs in series. Then, a higher power pulse with amplitude of 20 kV on 200 Ω load, duration of about 40 ns and repetition frequency of 20 kHz is generated by the technique that transmission line transformers (TLTs) synthesize two pulses. An emulational circuit model is designed after the structure of pulse generation device is analyzed. The distortion of output pulse is analyzed by the model. Factors influencing the output pulse waveform are discussed. A reference for optimizing output pulse is put forward.
- high voltage pulse,
- self-matched transmission line,
- opto-isolator,
- transmission line transformer,
- power-combining

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References(13)

References

[1]	High voltage avalanche pulser summary[EB/OL]. http://www.kentech.co.uk/pulser_summary.html.
[2]	Chung Y H, Kim H J, Yang C S. MOSFET switched 20 kV, 500 A, 100 ns pulse generator with energy recovery circuit[C]//Pulsed Power Plasma Science. 2001.
[3]	Watson A, Cook E G, Chen Y J, et al. A solid-state modulator for high speed kickers[C]//Proceedings of Particle Accelerator Conference. 2001, 5: 3738-3740.
[4]	Cook E G. Review of solid-state modulators[C]//XX International Linac Conference. 2012: 663-667.
[5]	Barnes M J, Wait G D. A 25-kV 75-kHz kicker for measurement of muon lifetime[J]. IEEE Trans Plasma Science, 2004, 32(5): 1932-1944. doi: 10.1109/TPS.2004.835455
[6]	Efanov V. Pulse generators based on FID technology[R]. Xi'an: Xi'an Jiaotong University, 2016.
[7]	刘春平, 龚向东, 黄虹宾, 等. 纳秒和亚纳秒级固态器件高压脉冲源的研制[J]. 电讯技术, 2009, 49(8): 6-8. https://www.cnki.com.cn/Article/CJFDTOTAL-DATE200908001.htm Liu Chunping, Gong Xiangdong, Huang Hongbin, et al. Development of a nano and sub-nanosecond solid state device high voltage pulser. Telecommunication Engineering, 2009, 49(8): 6-8 https://www.cnki.com.cn/Article/CJFDTOTAL-DATE200908001.htm
[8]	石小燕, 曹晓阳, 梁勤金, 等. 多路窄脉冲功率线路合成[J]. 强激光与粒子束, 2010, 22(4): 699-722. http://www.hplpb.com.cn/article/id/4488 Shi Xiaoyan, Cao Xiaoyang, Liang Qinjin, et al. Power synthesization of multi-channel narrow pulses by circuitry. High Power Laser and Particle Beams, 2010, 22(4): 699-722 http://www.hplpb.com.cn/article/id/4488
[9]	朱会柱, 汪秀, 袁斌. 基于MOS关的高频高压脉冲源中电磁兼容问题研究[J]. 电子技术, 2011(3): 34-36. doi: 10.3969/j.issn.1000-0755.2011.03.013 Zhu Huizhu, Wang Xiu, Yuan Bin. Investigation on the EMC in HF-HV pulse generator based on MOS switch. Electronics Technology, 2011(3): 34-36 doi: 10.3969/j.issn.1000-0755.2011.03.013
[10]	韩永林, 梁伟, 胡永宏. 用金属氧化物半导体场效应晶体管器件实现的高重复率电光Q模块设计[J]. 中国激光, 2006, 33(10): 1329-1332. https://www.cnki.com.cn/Article/CJFDTOTAL-JJZZ200610008.htm Han Yonglin, Liang Wei, Hu Yonghong. Design of high repetition rate electro-optically Q-switched module with vertical metal oxide semiconductor field effect transistor component. Chinese Journal of Lasers, 2006, 33(10): 1329-332 https://www.cnki.com.cn/Article/CJFDTOTAL-JJZZ200610008.htm
[11]	陈静, 周晓青. 基于固态开关器件的新型高压脉冲驱动源[J]. 现代电子技术, 2012, 35(4): 208-210. https://www.cnki.com.cn/Article/CJFDTOTAL-XDDJ201204067.htm Chen Jing, Zhou Xiaoqing. New high-voltage pulse driving source based on solid switch device. Modern Electronics Technique, 2012, 35(4): 208-210 https://www.cnki.com.cn/Article/CJFDTOTAL-XDDJ201204067.htm
[12]	赵鑫, 张乔根, 白雁力, 等. MOSFET在感应叠加型高压双方波脉冲发生装置中的应用[J]. 高电压技术, 2015, 41(12): 4066-4072. https://www.cnki.com.cn/Article/CJFDTOTAL-GDYJ201512028.htm Zhao Xin, Zhang Qiaogen, Bai Yanli, et al. Application of MOSFET in high voltage double square-wave pulses generator with inductive adder configuration. High Voltage Engineering, 2015, 41(12): 4066-4072 https://www.cnki.com.cn/Article/CJFDTOTAL-GDYJ201512028.htm
[13]	李炳旺. 芯片封装引线电性能的测试[J]. 集成电路通讯, 2004, 22(2): 17-21. Li Bingwang. Electrical characteristic testing of chip pin. Jicheng Dianlu Tongxun, 2004, 22(2): 17-21