Volume 30 Issue 9
Sep.  2018
Turn off MathJax
Article Contents
Wang Yajie, He Pengjun, Jing Xiaopeng, et al. Simulation and calculation of pulsed power source based on drift step recovery diode switching[J]. High Power Laser and Particle Beams, 2018, 30: 095005. doi: 10.11884/HPLPB201830.170398
Citation: Wang Yajie, He Pengjun, Jing Xiaopeng, et al. Simulation and calculation of pulsed power source based on drift step recovery diode switching[J]. High Power Laser and Particle Beams, 2018, 30: 095005. doi: 10.11884/HPLPB201830.170398

Simulation and calculation of pulsed power source based on drift step recovery diode switching

doi: 10.11884/HPLPB201830.170398
  • Received Date: 2017-10-12
  • Rev Recd Date: 2018-02-13
  • Publish Date: 2018-09-15
  • This paper describes the operation principle and characteristic of the drift step recovery diode (DSRD), a new type of semiconductor switching, and summarizes the development and application of pulsed power source based on semiconductor switching. Based on the equivalent model of DSRD switching, it builds the simulation model of the forward and reverse pumping current circuit. Based on the output voltage, it simulates and calculates the main energy storage inductance and primary energy storage inductance, gets the optimum parameters of other components. It analyzes the value of the parallel capacitor and the MOSFET parasitic capacitor output parameter, and gets the optimum values of parallel capacitor and blocking capacitor. A pulsed power source was designed based on the DSRD. The source can work in continuous mode, with the amplitude above 2 kV, the rise time less than 680 ps(from 20% to 90%), the FWHM about 1.5 ns and the working frequency more than 1 MHz.
  • loading
  • [1]
    余岳辉, 梁琳. 脉冲功率器件及其应用[M]. 北京: 械工业出版社, 2010: 212-217.

    Yu Yuehui, Liang Lin. Pulse power device and application. Beijing: China Machine Press, 2010: 212-217
    [2]
    Efanov V M, Kardo A F, Larionov M A, et al. Powerful semiconductor 80 kV nanosecond pulser[J]. IEEE Transactions on Plasma Science, 2010, 38(5): 1118-1123. doi: 10.1109/TPS.2010.2043857
    [3]
    Kesar A S, Merensky L M, Ogranovich M, et al. 6-kV, 130-ps rise-time pulsed-power circuit featuring cascaded compression by fast recovery and avalanche diodes[J]. Electronics Letters, 2013, 49(24): 1539-1540. doi: 10.1049/el.2013.2129
    [4]
    方旭, 丁臻捷, 浩庆松, 等. 基于DSRD的高重频亚纳秒脉冲产生方法研究[C]//第四届全国脉冲功率会议. 2015.

    Fang Xu, Ding Zhenjie, Hao Qingsong, et al. Study on generation of drift step recovery diodes for sub-nanosecond switching and high repetition rate operation//The 4th China Pulse Power Conference. 2015
    [5]
    马红梅, 刘忠山, 张勇, 等. 型亚纳秒切断半导体开关器件研制[J]. 器件制造与应用, 2010, 35(4): 337-339. https://www.cnki.com.cn/Article/CJFDTOTAL-BDTJ201004015.htm

    Ma Hongmei, Liu Zhong-shan, Zhang Yong, et al. Design and manufacture of novel sub-nanosecond opening semiconductor switch. Manufacturing and Application of Device, 2010, 35(4): 337-339 https://www.cnki.com.cn/Article/CJFDTOTAL-BDTJ201004015.htm
    [6]
    Merensky L M, Kardo A F, Flerov A N, et al. A low-jitter 1.8-kV 100-ps rise-time 50-kHz repetition-rate pulsed-power generator[J]. IEEE Transactions on Plasma Science, 2009, 37(9): 1855-1862. doi: 10.1109/TPS.2009.2025377
    [7]
    Merensky L M, Kardo A F, Shmilovitz D, et al. Efficiency study of a 2.2 kV, 1 ns, 1 MHz pulsed power generator based on a drift-step-recovery diode[J]. IEEE Transactions on Plasma Science, 2013, 41(11): 3138-3142. doi: 10.1109/TPS.2013.2284601
  • 加载中

Catalog

    通讯作者: 陈斌, bchen63@163.com
    • 1. 

      沈阳化工大学材料科学与工程学院 沈阳 110142

    1. 本站搜索
    2. 百度学术搜索
    3. 万方数据库搜索
    4. CNKI搜索

    Figures(9)

    Article views (1354) PDF downloads(219) Cited by()
    Proportional views
    Related

    /

    DownLoad:  Full-Size Img  PowerPoint
    Return
    Return