Influence of pulse interval on thermal damage process of PIN limiter

Wang Ming; Ma Hongge

doi:10.11884/HPLPB201830.170426

Volume 30 Issue 6

Jun. 2018

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Citation:

Wang Ming, Ma Hongge. Influence of pulse interval on thermal damage process of PIN limiter[J]. High Power Laser and Particle Beams, 2018, 30: 063002. doi: 10.11884/HPLPB201830.170426

Citation:

Wang Ming, Ma Hongge. Influence of pulse interval on thermal damage process of PIN limiter[J]. High Power Laser and Particle Beams, 2018, 30: 063002. doi: 10.11884/HPLPB201830.170426

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Influence of pulse interval on thermal damage process of PIN limiter

doi: 10.11884/HPLPB201830.170426

Wang Ming^{1, 3
,},
Ma Hongge^{1, 2}

1.
Science and Technology on High Power Microwave Laboratory, Institute of Applied Electronics, CAEP, Mianyang 621900, China
2.
Complicated Electromagnetic Environment Laboratory, CAEP, Mianyang 621900, China
3.
Graduate School of China Academy of Engineering Physics, Beijing 100088, China

Received Date: 2017-11-01
Rev Recd Date: 2017-12-18
Publish Date: 2018-06-15

Abstract

Abstract

Based on the device physics simulation, focusing on the influence of pulse interval on thermal damage process of PIN limiter, the peak temperature of combined pulses with different pulse interval from 1 to 20 ns is studied. Numerical simulation results show that the pulse interval in which the device temperature rises most has a positive relationship with intrinsic region thickness. The thermal breakdown mechanism is analyzed. It is the spike leakage of the second sub-pulse that makes the temperature rise speed up. And the high temperature of the P-type region also causes the electrothermal feedback which makes it easier to get higher temperature.
- PIN limiter,
- combined pulse,
- thermal damage,
- microwave pulse

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References(8)

References

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