Design of high repetition rate and high voltage pulse generator based on metal oxide semiconductor field-effect transistor

Shi Xiaoyan; Ren Xianwen; Liu Ping; Yang Zhoubing

doi:10.11884/HPLPB201931.180321

Volume 31 Issue 4

Apr. 2019

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Shi Xiaoyan, Ren Xianwen, Liu Ping, et al. Design of high repetition rate and high voltage pulse generator based on metal oxide semiconductor field-effect transistor[J]. High Power Laser and Particle Beams, 2019, 31: 040022. doi: 10.11884/HPLPB201931.180321

Citation:

Shi Xiaoyan, Ren Xianwen, Liu Ping, et al. Design of high repetition rate and high voltage pulse generator based on metal oxide semiconductor field-effect transistor[J]. High Power Laser and Particle Beams, 2019, 31: 040022. doi: 10.11884/HPLPB201931.180321

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Design of high repetition rate and high voltage pulse generator based on metal oxide semiconductor field-effect transistor

doi: 10.11884/HPLPB201931.180321

Science and Technology on High Power Microwave Laboratory, Institute of Applied Electronics, CAEP, Mianyang 621900, China

Received Date: 2018-11-14
Rev Recd Date: 2019-01-10
Publish Date: 2019-04-15

Abstract

Abstract

The paper presents a design of high voltage pulse generator based on metal oxide semiconductor field-effect transistor (MOSFET).The high voltage and high repetition rate switch module by stacking many MOSFET in series was investigated to generate high voltage pulse. A pulse generator was designed by the switch module. An experiment setup stacking 15 MOSFETs whose V_ds is 1 kV was set up in series. A high voltage pulse with amplitude of 10 kV on 500 Ω load, duration of about 100 ns and repeat frequency of 400 kHz was obtained. Because of the fine characteristic of compact-structure and high reliability, the high voltage switch module could be used in many type of pulse generator.
- high voltage switch module,
- high voltage pulse,
- high repetition rate,
- pulse generator

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References(10)

References

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