Design of X~Ku band broadband driver amplifier

Zhou Shouli; Chen Ruitao; Zhou Shancheng; Li Ruchun

doi:10.11884/HPLPB201931.180342

Volume 31 Issue 3

Mar. 2019

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Article Navigation > High Power Laser and Particle Beams > 2019 > 31(3): 033002

Zhou Shouli, Chen Ruitao, Zhou Shancheng, et al. Design of X~Ku band broadband driver amplifier[J]. High Power Laser and Particle Beams, 2019, 31: 033002. doi: 10.11884/HPLPB201931.180342

Citation:

Zhou Shouli, Chen Ruitao, Zhou Shancheng, et al. Design of X~Ku band broadband driver amplifier[J]. High Power Laser and Particle Beams, 2019, 31: 033002. doi: 10.11884/HPLPB201931.180342

Zhou Shouli, Chen Ruitao, Zhou Shancheng, et al. Design of X~Ku band broadband driver amplifier[J]. High Power Laser and Particle Beams, 2019, 31: 033002. doi: 10.11884/HPLPB201931.180342

Citation:

Zhou Shouli, Chen Ruitao, Zhou Shancheng, et al. Design of X~Ku band broadband driver amplifier[J]. High Power Laser and Particle Beams, 2019, 31: 033002. doi: 10.11884/HPLPB201931.180342

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Design of X~Ku band broadband driver amplifier

doi: 10.11884/HPLPB201931.180342

College of Information Engineering, Zhejiang University of Technology, Hangzhou 310023, China

Received Date: 2018-11-29
Rev Recd Date: 2019-02-24
Publish Date: 2019-03-15

Abstract

Abstract

In this paper, an X~Ku band broadband 1 W driver amplifier MMIC based on 0.25 μm GaN HEMT on SiC process is designed. The design uses an equivalent RC model of active devices' large-signal output impedance for verifying the accuracy of the GaN HEMT process model. And large-signal output impedances of GaN HEMT with different dimensions are achieved. Negative feedback structure is applied for the first-stage transistor to reduce the Q value of the matching network. The broadband matching is successfully achieved through band-pass matching network topology. The measurement results show that this driver amplifier at 28 V operation voltage achieved over 30 dBm output power, 21% power added efficiency and 15 dB power gain from 8 GHz to 18 GHz. The chip size is 2.20 mm×1.45 mm. The MMIC chip has the characteristics of wide bandwidth, high efficiency and small size. It can be mainly used in fields such as millimeter-wave transceiver components and wireless communication, and has broad application prospect.
- X~Ku band,
- GaN,
- driver power,
- negative feedback,
- MMIC

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References(16)

References

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