Volume 31 Issue 8
Aug.  2019
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Li Zheng, Wu Jian, Bai Zhongxiong, et al. Study of gamma irradiation effect on the 4H-SiC detector[J]. High Power Laser and Particle Beams, 2019, 31: 086002. doi: 10.11884/HPLPB201931.180345
Citation: Li Zheng, Wu Jian, Bai Zhongxiong, et al. Study of gamma irradiation effect on the 4H-SiC detector[J]. High Power Laser and Particle Beams, 2019, 31: 086002. doi: 10.11884/HPLPB201931.180345

Study of gamma irradiation effect on the 4H-SiC detector

doi: 10.11884/HPLPB201931.180345
  • Received Date: 2018-11-30
  • Rev Recd Date: 2019-04-28
  • Publish Date: 2019-08-15
  • To investigate 4H-SiC detector’s resistance to gamma irradiation, the detector was irradiated by 60Co gamma-ray(about 4×105 Ci), and the maximum cumulative dose was 1 MGy. The detector’s I-V characteristics and its performance in detecting charged particles were tested after gamma irradiation. The forward current increased and the reverse current decreased as the cumulative dose was increased. The ideal factor and Schottky barrier height were extracted from forward I-V curves, and the result showed that ideal factor increased and Schottky barrier height decreased after irradiation. The detector was exposed to 241Am source, and it was found that the detector’s performance degraded slightly after gamma irradiation. However, the detector behaved well in detection after it received gamma exposures at a dose of 1 MGy: its charge collection efficiency was 93.55% and its energy resolution was 2.32% in detecting alpha particles of 5.486 MeV. Therefore it has been proved that 4H-SiC detector has good resistance to gamma irradiation.
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  • [1]
    Sciortino S, Cindro V, Hartjes F, et al. Effect of heavy proton and neutron irradiations on epitaxial 4H-SiC Schottky diodes[J]. Nuclear Inst & Methods in Physics Research A, 2005, 552(1): 138-145. https://www.sciencedirect.com/science/article/pii/S0168900205011897
    [2]
    Wu J, Lei J, Jiang Y, et al. Feasibility study of a SiC sandwich neutron spectrometer[J]. Nuclear Inst & Methods in Physics Research A, 2013, 708(708): 72-77. https://www.sciencedirect.com/science/article/pii/S016890021300065X
    [3]
    De Napoli M, Giacoppo F, Raciti G, et al. Study of charge collection efficiency in 4H-SiC Schottky diodes with 12C ions[J]. Nuclear Inst & Methods in Physics Research A, 2009, 608(1): 80-85.
    [4]
    Seshadri S, Dulloo A R, Ruddy F H, et al. Demonstration of an SiC neutron detector for high-radiation environments[J]. IEEE Trans Electron Devices Ed, 1999, 46(3): 567-571. doi: 10.1109/16.748878
    [5]
    Park S H, Park J S, Seo H, et al. Development of SiC detector for the harsh environment applications[C]//IEEE Nuclear Science Symposium & Medical Imaging Conference. 2013.
    [6]
    Kalinina E V, Strokan N B, Ivanov A M, et al. 4H-Si Chigh temperature spectrometers[C]//Materials Science Forum. 2007.
    [7]
    Nava F, Vittone E, Vanni P, et al. Radiation tolerance of epitaxial silicon carbide detectors for electrons, protons and gamma-rays[J]. Nuclear Inst & Methods in Physics Research A, 2003, 514(1/3): 126-134. https://www.sciencedirect.com/science/article/pii/S0168900202015589
    [8]
    Kinoshita A, Iwami M, Kobayashi K I, et al. Radiation effect on pn-SiC diode as a detector[J]. Nuclear Inst & Methods in Physics Research A, 2005, 541(1): 213-220. https://www.sciencedirect.com/science/article/pii/S0168900205000719
    [9]
    张林, 肖剑, 邱彦章, 等. Ti/4H-SiC肖特基势垒二极管抗辐射特性的研究[J]. 物理学报, 2011, 60: 056106. https://www.cnki.com.cn/Article/CJFDTOTAL-WLXB201105083.htm

    Zhang Lin, Xiao Jian, Qiu Yanzhang, et al. Radiation effect on Ti/4H-SiC SBD of gamma-ray, electrons and neutrons. Acta Physica Sinica, 2011, 60: 056106) https://www.cnki.com.cn/Article/CJFDTOTAL-WLXB201105083.htm
    [10]
    张林, 张义门, 张玉明, 等. Ni/4H-SiC肖特基势垒二极管的γ射线辐照效应[J]. 物理学报, 2009, 58(4): 2737-2741. https://www.cnki.com.cn/Article/CJFDTOTAL-WLXB200904096.htm

    Zhang Lin, Zhang Yimen, Zhang Yuming, et al. Gamma-ray radiation effect on Ni/4H-SiC SBD. Acta Physica Sinica, 2009, 58(4): 2737-2741) https://www.cnki.com.cn/Article/CJFDTOTAL-WLXB200904096.htm
    [11]
    Table of radioisotopes in radiation safety reference manual[EB/OL]. https://www.vumc.org/safety/about/safety/safety/safety/rad.
    [12]
    Sze S M. Physics of semiconductor devices[M]. 2nd ed. New Jersey: Wiley, 1981.
    [13]
    Claeys C, Simoen E. 先进半导体材料及器件的辐射效应[M]. 北京: 国防工业出版社, 2008.

    Claeys C, Simoen E. Radiation effects in advanced semiconductor materials and devices. Beijing: National Defense Industry Press, 2008)
    [14]
    Kang S M, Ha J H, Park S H, et al. Study of the current-voltage characteristics of a SiC radiation detector irradiated by Co-60 gamma-rays[J]. Nuclear Instruments & Methods in Physics Research, 2007, 579(1): 145-147. https://www.sciencedirect.com/science/article/pii/S0168900207005967
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