Volume 31 Issue 3
Mar.  2019
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Yang Shi, Ren Shuqing, Lai Dingguo, et al. High power high voltage constant current capacitor charging power supply[J]. High Power Laser and Particle Beams, 2015, 27: 095006. doi: 10.11884/HPLPB201527.095006
Citation: Zeng Hongbo, Peng Xiaomei, Wang Jun. Analysis of RF noise mechanism in strong inversion region nanoscale MOSFET[J]. High Power Laser and Particle Beams, 2019, 31: 034101. doi: 10.11884/HPLPB201931.180375
shu

Analysis of RF noise mechanism in strong inversion region nanoscale MOSFET

doi: 10.11884/HPLPB201931.180375

  • School of Information Engineering, Southwest University of Science and Technology, Mianyang 621010, China

  • Received Date: 2018-12-20
  • Rev Recd Date: 2019-02-16
  • Publish Date: 2019-03-15
    Abstract
  • In order to effectively characterize the RF noise characteristics in the strong inversion region of nanoscale MOSFET, the noise modeling method is studied. Based on the analysis of extracted results of radio frequency small-signal equivalent circuit parameters of 45 nm MOSFET, a compact model for the MOSFET's drain current noise is proposed. This model fully describes three kinds of main physical sources that determine the noise mechanism of 45 nm MOSFET, including intrinsic drain current noise, thermal noise induced by the gate parasitic resistance, and coupling thermal noise induced by substrate parasitic effect. The accuracy of the proposed model is verified by noise measurements, and the intrinsic drain current noise of 45 nm MOSFET is proved to be the suppressed shot noise, and with the decrease of the gate voltage, the suppressed degree gradually decreases until it vanishes.
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    • References(15)
  • [1]
    Navid R, Jungemann C, Lee T H, et al. High frequency noise in nanoscale MOSFETs[J]. J Appl Phys, 2007, 101: 124501. doi: 10.1063/1.2740345
    [2]
    Wang S C, Su P, Chen K M, et al. Comprehensive noise characterization and modeling for 65nm MOSFETs[J]. IEEE Trans Microw Theory Tech, 2010, 58(4): 740-746. doi: 10.1109/TMTT.2010.2041582
    [3]
    Antonopoulos A, Bucher M, Papathanasiou K, et al. CMOS small-signal and thermal noise modeling at high frequencies[J]. IEEE Trans Electron Devices, 2013, 60(11): 3727-3733.
    [4]
    Chan L H K, Yeo K S, Chew K W J, et al. High-frequency noise modeling of MOSFETs for ultra low-voltage RF applications[J]. IEEE Trans Microw Theory Techn, 2015, 63(1): 141-153. doi: 10.1109/TMTT.2014.2371827
    [5]
    Chalkiadaki M A, Enz C C. RF small-signal and noise modeling including parameter extraction of nanoscale MOSFETs from weak to strong inversion[J]. IEEE Trans Microw Theory Techn, 2015, 63(7): 2173-2184. doi: 10.1109/TMTT.2015.2429636
    [6]
    Ong S N, Yeo K S, Chew W J. Impact of velocity saturation and hot carrier effects on channel thermal noise model of deep sub-micron MOSFETs[J]. Solid-State Electronics, 2012, 72: 32-37.
    [7]
    Smit G D J, Scholten A J, Pijper R M T, et al. RF-noise modeling in advanced CMOS technologies[J]. IEEE Trans Electron Devices, 2014, 61(2): 245-254. doi: 10.1109/TED.2013.2282960
    [8]
    Jeon J, Lee J, Kim J, et al. The first observation of shot noise characteristic in 10-nm scale MOSFETs[C]//2009 Symposium on VLSI Technology. 2009: 48-49.
    [9]
    Mahajan V M, Patalay P R, Jindal R P, et al. A physical understanding of RF noise in bulk nMOSFETs with channel lengths in the nanometer regime[J]. IEEE Trans Electron Devices, 2012, 59(1): 197-205. doi: 10.1109/TED.2011.2173691
    [10]
    Andersson S, Svensson C. Direct experimental verification of shot noise in short channel MOS transistors[J]. Electron Lett, 2005, 41(15): 869-870. doi: 10.1049/el:20051474
    [11]
    Spathis C, Birbas A, Georgakopoulou K. Semi-classical noise investigation for sub-45nm metal-oxide-semiconductor field effect[J]. AIP Advances, 2015, 5: 087114. doi: 10.1063/1.4928424
    [12]
    Tsididis Y. Operation and modeling of the MOS transistor[M]. Boston, M A: WCB/McGraw-Hill, 1999: 66.
    [13]
    李博, 王军. 45 nm MOSFET毫米波小信号等效电路模型参数提取技术[J]. 强激光与粒子束, 2019, 31: 024101. doi: 10.11884/HPLPB201931.180374

    Li Bo, Wang Jun. Parameter extraction technique of millimeter wave small-signal equivalent circuit model of 45 nm MOSFET. High Power Laser and Particle Beams, 2019, 31: 024101 doi: 10.11884/HPLPB201931.180374
    [14]
    Lee C I, Lin W C, Lin Y T. An improved cascade based noise de-embedding method for on-wafer noise parameter measurement[J]. IEEE Trans Electron Devices Lett, 2015, 36(4): 291-293. doi: 10.1109/LED.2015.2405915
    [15]
    Chan L H K, Yeo K S, Chew K W J, et al. MOSFET drain current noise modeling with effective gate overdrive and junction noise[J]. IEEE Trans Electron Device Lett, 2012, 33(8): 1117-1119. doi: 10.1109/LED.2012.2203781
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