Recent development of wide bandgap semiconductor SiC substrates and device

Xiao Longfei; Xu Xiangang

doi:10.11884/HPLPB201931.190043

Volume 31 Issue 4

Apr. 2019

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Xiao Longfei, Xu Xiangang. Recent development of wide bandgap semiconductor SiC substrates and device[J]. High Power Laser and Particle Beams, 2019, 31: 040003. doi: 10.11884/HPLPB201931.190043

Citation:

Xiao Longfei, Xu Xiangang. Recent development of wide bandgap semiconductor SiC substrates and device[J]. High Power Laser and Particle Beams, 2019, 31: 040003. doi: 10.11884/HPLPB201931.190043

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Recent development of wide bandgap semiconductor SiC substrates and device

doi: 10.11884/HPLPB201931.190043

Xiao Longfei,
Xu Xiangang^,

The State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China

Received Date: 2019-02-09
Rev Recd Date: 2019-03-01
Publish Date: 2019-04-15

Abstract

Abstract

As a key representative material for the third-generation wide bandgap semiconductors, silicon carbide (SiC) is a promising wide band gap semiconductor material and can be used for the fabrication of high-power and high-frequency electronics, due to its superior physical properties, such as high thermal conductivity, wide band gap and high critical breakdown field. In recent years, bulk growth of SiC single crystals and the fabrication of devices have made significant progress. The paper introduces the growth techniques for SiC bulk and presents the relationship between the on-state resistance and voltage or laser energy. It also analyses the failure of devices.
- silicon carbide,
- physical vapor transport method,
- power device,
- photoconductive semiconductor switch,
- device failure

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References(23)

References

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