Microwave damage susceptibilitytrend of the silicon NPN monolithic composite transistor as a function of structure parameters

Jin Wenxuan; Chai Changchun; Liu Yuqian; Wu Han; Yang Yintang

doi:10.11884/HPLPB201931.190218

Volume 31 Issue 10

Oct. 2019

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Jin Wenxuan, Chai Changchun, Liu Yuqian, et al. Microwave damage susceptibilitytrend of the silicon NPN monolithic composite transistor as a function of structure parameters[J]. High Power Laser and Particle Beams, 2019, 31: 103220. doi: 10.11884/HPLPB201931.190218

Citation:

Jin Wenxuan, Chai Changchun, Liu Yuqian, et al. Microwave damage susceptibilitytrend of the silicon NPN monolithic composite transistor as a function of structure parameters[J]. High Power Laser and Particle Beams, 2019, 31: 103220. doi: 10.11884/HPLPB201931.190218

Citation:

Jin Wenxuan, Chai Changchun, Liu Yuqian, et al. Microwave damage susceptibilitytrend of the silicon NPN monolithic composite transistor as a function of structure parameters[J]. High Power Laser and Particle Beams, 2019, 31: 103220. doi: 10.11884/HPLPB201931.190218

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Microwave damage susceptibilitytrend of the silicon NPN monolithic composite transistor as a function of structure parameters

doi: 10.11884/HPLPB201931.190218

Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China

Funds:

Open Fund of Key Laboratory of Complex Electromagnetic Environment Science and Technology, China Academy of Engineering Physics 2015-0214.XYK

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Author Bio:
Jin Wenxuan(1995—), male, Master degree candidate, engaged in research of semiconductor devices and circuit reliability; wenxuan_jin@163.com
Corresponding author: Liu Yuqian(1993—), male, PhD, engaged in research of semiconductor devices and circuit reliability; yuqianliuxd@163.com
Received Date: 2019-06-17
Rev Recd Date: 2019-08-30
Publish Date: 2019-10-15

Abstract

Abstract

This paper presents a theoretical study on the influences of the device structure parameters on the damage progress of the silicon NPN monolithic composite transistor induced by injection power. The silicon NPN monolithic composite transistors (composed by two successive transistors, T1 and T2) with three different structural parameters are established utilizing the circuit simulator, Sentaurus-TCAD. The dependences of the damage energy threshold and the damage power threshold required to cause the device failure on the pulse-width are obtained. The results show that higher power threshold and more energy are needed to damage the device if the area of the T2 transistor is larger. A study of the damage mechanism is conducted based on the variation analysis of the distributions of the electric field, current density, and temperature in the device. It is found that the distributions of the electric field, current density, and temperature become more dispersed as the area of the T2 transistor increases. It is concluded that when the overall area of the silicon NPN monolithic composite transistor is constant, and as the area ratio of the T2 transistor and the T1 transistor increases, the device becomes less vulnerable to damage. Moreover, the emitter resistor R_e has a significant effect on the burnout time. The simulated burnt spot position of the transistor is in good agreement with the experimental result.
- monolithic composite transistor,
- high power microwave,
- device structures,
- external component

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References(24)

References

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