Effects of different sequential neutron/gamma irradiation on current gain of bipolar devices

Wang Kai; Lü Xueyang; Wu Kunlin; Feng Jiaming; Fan Xiaoqiang; Li Junjie; Yang Guixia; Lu Yi; Qiu Dong; Zou Dehui

doi:10.11884/HPLPB202032.190333

Volume 32 Issue 4

Mar. 2020

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Wang Kai, Lü Xueyang, Wu Kunlin, et al. Effects of different sequential neutron/gamma irradiation on current gain of bipolar devices[J]. High Power Laser and Particle Beams, 2020, 32: 044001. doi: 10.11884/HPLPB202032.190333

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Effects of different sequential neutron/gamma irradiation on current gain of bipolar devices

doi: 10.11884/HPLPB202032.190333

Institute of Nuclear Physics and Chemistry, CAEP, Mianyang 621900, China

Received Date: 2019-09-04
Rev Recd Date: 2020-01-09
Publish Date: 2020-03-06

Abstract

Abstract

In this paper, CFBR-II fast neutron reactor (China's second fast neutron pulse reactor) and Co-60 device are used to carry out experiments on different sequential neutrons/gamma irradiated bipolar transistors. Under the condition that the collector-emitter voltage is constant, the variation curve of the bipolar transistor current gain with the collector current is measured, and the influence of different irradiation order of neutron/ gamma on the current gain of the bipolar transistor is studied. The experimental results show that when the collector-emitter voltage is constant and the collector current is extremely low, the current gain degradation of the bipolar transistor is relatively large, and the current gain increases with the collector current. The degradation of the current gain of the bipolar transistor caused by the gamma irradiation after the neutron pre-irradiation would be greater than that of the neutron irradiation after the gamma pre-irradiation, and the difference is more obvious in PNP transistor than in NPN transistor. This paper presents a preliminary discussion on the related mechanism.
- bipolar junction transistors,
- neutrons,
- gamma,
- current gain,
- collector current

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References

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