Design of G-band 500 W sheet beam extended-interaction klystron

Zhang Changqing; Feng Jinjun; Cai Jun; Pan Pan

doi:10.11884/HPLPB202032.200195

Volume 32 Issue 10

Sep. 2020

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Article Navigation > High Power Laser and Particle Beams > 2020 > 32(10): 103003

Zhang Changqing, Feng Jinjun, Cai Jun, et al. Design of G-band 500 W sheet beam extended-interaction klystron[J]. High Power Laser and Particle Beams, 2020, 32: 103003. doi: 10.11884/HPLPB202032.200195

Citation:

Zhang Changqing, Feng Jinjun, Cai Jun, et al. Design of G-band 500 W sheet beam extended-interaction klystron[J]. High Power Laser and Particle Beams, 2020, 32: 103003. doi: 10.11884/HPLPB202032.200195

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Design of G-band 500 W sheet beam extended-interaction klystron

doi: 10.11884/HPLPB202032.200195

National Key Laboratory of Science and Technology on Vacuum Electronics, Beijing Vacuum Electronics Research Institute, Beijing 100015, China

Received Date: 2020-07-10
Rev Recd Date: 2020-08-25
Publish Date: 2020-09-29

Abstract

Abstract

High power generation in terahertz frequency band is limited by physical mechanism. A G-band sheet beam extended-interaction klystron was designed to demonstrate the power level and the physical factors that affect the performance of the klystron. An elliptical electron beam with a voltage of 24.5 kV, a current of 0.6 A and the dimension of 1 mm×0.15 mm was used. To match the size of the sheet beam and obtain high efficiency and high gain, the transverse-oversized barbell type multi-gap resonant cavity was used as the interaction circuit. The 3D PIC simulation results show that more than 500 W of power output can be obtained with the actual cavity loss considered, and the electron efficiency and gain are 3.65% and 38.2 dB respectively. It is found that the power and efficiency are largely restricted by the mode stability of the multi-gap cavity as well as the ohmic loss. The ohmic loss of the output cavity has a significant effect on the final output power which should be given special consideration in engineering design. The research in this paper has laid a good foundation for the development of high frequency sheet beam extended-interaction devices.
- terahertz,
- sheet beam,
- vacuum electronic devices,
- extended interaction,
- multi-gap resonator,
- mode analysis,
- 3D PIC simulation

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References(17)

References

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