Research of G-band extended interaction klystron broadband beam-wave interaction system

Zeng Xin; Qu Zhaowei; Xue Qianzhong

doi:10.11884/HPLPB202133.200313

Volume 33 Issue 3

Mar. 2021

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Zeng Xin, Qu Zhaowei, Xue Qianzhong. Research of G-band extended interaction klystron broadband beam-wave interaction system[J]. High Power Laser and Particle Beams, 2021, 33: 033007. doi: 10.11884/HPLPB202133.200313

Citation:

Zeng Xin, Qu Zhaowei, Xue Qianzhong. Research of G-band extended interaction klystron broadband beam-wave interaction system[J]. High Power Laser and Particle Beams, 2021, 33: 033007. doi: 10.11884/HPLPB202133.200313

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Research of G-band extended interaction klystron broadband beam-wave interaction system

doi: 10.11884/HPLPB202133.200313

Zeng Xin^{1, 2
,},
Qu Zhaowei¹,
Xue Qianzhong^{1, 2
,
,}

1.
Key Laboratory of Science and Technology on High Power Microwave Sources and Technologies, Aerospace Information Research Institude , Chinese Academy of Sciences, Beijing 101407, China
2.
University of Chinese Academy of Sciences, Beijing 101407, China

Received Date: 2020-11-18
Rev Recd Date: 2021-02-08

Available Online: 2021-03-30

Publish Date: 2021-03-05

Abstract

Abstract

Extended interaction klystron adopts multi-gap distributed interaction resonantor and all metal planar structure, which makes the interaction circuit short and the gain per length high. Its planarization structure is compatible with modern micromachining technology, which has made it a research hotspot to develop terahertz high-power source. Further extending the bandwidth of the extended interaction amplifier becomes the key technology to expand its application. A G-band 5-cavity multi-gap beam-wave interaction circuit is designed in this paper. Stagger tuning technology is used to expand the cluster bandwidth and filter loading technology is used to expand the output circuit bandwidth. Structural parameter optimization and output characteristic simulation by CST show that when the electron beam voltage is 19 kV, the current is 300 mA and the input power is 120 mW, the output power is 222 W, the electron efficiency is 3.89%, the gain is 32.67 dB, and the 3 dB instantaneous bandwidth reaches 1.5 GHz.
- terahertz,
- extended interaction klystron,
- multi-gap resonantor,
- broadband,
- PIC simulation

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References(15)

References

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