Fabrication of high-power semiconductor laser with wavelength-locked at 780 nm

He Lin’an; Zhou Kun; Zhang Liang; Li Yi; Du Weichuan; Hu Yao; Gao Songxin; Tang Chun

doi:10.11884/HPLPB202133.210099

Volume 33 Issue 9

Sep. 2021

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Article Navigation > High Power Laser and Particle Beams > 2021 > 33(9): 091001

He Lin’an, Zhou Kun, Zhang Liang, et al. Fabrication of high-power semiconductor laser with wavelength-locked at 780 nm[J]. High Power Laser and Particle Beams, 2021, 33: 091001. doi: 10.11884/HPLPB202133.210099

Citation:

He Lin’an, Zhou Kun, Zhang Liang, et al. Fabrication of high-power semiconductor laser with wavelength-locked at 780 nm[J]. High Power Laser and Particle Beams, 2021, 33: 091001. doi: 10.11884/HPLPB202133.210099

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Fabrication of high-power semiconductor laser with wavelength-locked at 780 nm

doi: 10.11884/HPLPB202133.210099

He Lin’an^{1, 2
,},
Zhou Kun^{1, 2},
Zhang Liang^{1, 2},
Li Yi^{1, 2},
Du Weichuan^{1, 2},
Hu Yao^{1, 2},
Gao Songxin^{1, 2},
Tang Chun^{1, 2}

1.
The Key Laboratory of Science and Technology on High Energy Laser, CAEP, Mianyang 621900, China
2.
Institute of Applied Electronics, CAEP, Mianyang 621900, China

Received Date: 2021-03-21
Rev Recd Date: 2021-08-18

Available Online: 2021-09-06

Publish Date: 2021-09-15

Abstract

Abstract

A short wavelength of 780 nm semiconductor laser has been designed and fabricated, and the mode locking by external cavity feedback has been studied. The epitaxial layers were prepared by the metal organic chemical vapor deposition technology. GaAsP and GaInP were used as the quantum well and waveguide layer, respectively. The confinement layers were AlGaInP material with low refractive index. Using the ultra-high vacuum cleavage and passivation technology, an amorphous ZnSe passivation layer was deposited on the laser cavity facets. For the original device the catastrophic optical damage (COD) occurred when the output power was 2.5 W. The ZnSe passivated device did not show COD phenomenon until 10.1 W. When the current was 10 A, the output power was 10.1 W, and the electro-optical conversion efficiency was 54%. Before and after the wavelength being locked by the volume Bragg grating (VBG), the full width at half maximum of the spectrum were 2.6 nm and 0.06 nm, respectively, and the wavelength range was about 230 pm through controlling the temperature of VBG.
- semiconductor lasers,
- catastrophic optical damage,
- spectral adjustment,
- ZnSe,
- external cavity feedback

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References(19)

References

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