Study of packaging in master oscillator power amplifier diode laser chip

Xie Pengfei; Lei Jun; Zhang Yonggang; Wang Chengqian; Lü Wenqiang; Wang Zhao; Du Weichuan; Gao Songxin

doi:10.11884/HPLPB202335.220235

Volume 35 Issue 5

Apr. 2023

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Article Navigation > High Power Laser and Particle Beams > 2023 > 35(5): 051001

Xie Pengfei, Lei Jun, Zhang Yonggang, et al. Study of packaging in master oscillator power amplifier diode laser chip[J]. High Power Laser and Particle Beams, 2023, 35: 051001. doi: 10.11884/HPLPB202335.220235

Citation:

Xie Pengfei, Lei Jun, Zhang Yonggang, et al. Study of packaging in master oscillator power amplifier diode laser chip[J]. High Power Laser and Particle Beams, 2023, 35: 051001. doi: 10.11884/HPLPB202335.220235

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Study of packaging in master oscillator power amplifier diode laser chip

doi: 10.11884/HPLPB202335.220235

Xie Pengfei^{1, 2
,},
Lei Jun^{1, 2},
Zhang Yonggang^{1, 2},
Wang Chengqian^{1, 2},
Lü Wenqiang^{1, 2},
Wang Zhao^{1, 2},
Du Weichuan^{1, 2},
Gao Songxin^{1, 2}

1.
Key Laboratory of Science and Technology on High Energy Laser, China Academy of Engineering Physics, Mianyang 621900, China
2.
Institute of Applied Electronics, CAEP, Mianyang 621900, China

Received Date: 2022-07-27
Accepted Date: 2023-02-22
Rev Recd Date: 2023-02-22

Available Online: 2023-03-11

Publish Date: 2023-04-07

Abstract

Abstract

The increase in junction temperature is an important factor affecting the output power of master oscillator power amplifier (MOPA) diode laser chip. To achieve the packaging and efficient heat dissipation of the multi-electrode MOPA semiconductor laser chip, a packaging structure that combining P-side up with heat spreader was proposed. An analytical three-dimensional thermal model was employed to study the influence on junction temperature between the P-side down, P-side up without heat spreader and P-side up with heat spreader. According to the three-dimensional thermal model, the conduction-cooled capability between P-side up with heat spreader and P-side down is uniform in this paper. Moreover, the packaging can lead to a maximal 40% decrease on junction temperature. By the way, the P-side up with heat spreader structure was used in MOPA diode laser chip in experiment then 10.5 W output power and the spectrum width (FWHM)＜0.1 nm of the MOPA chip were obtained in CW mode.
- master oscillator power amplifier diode laser,
- thermal design,
- package structure,
- heat sink

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References(16)

References

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