Volume 35 Issue 9
Sep.  2023
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Jiang Wentao, Zhao Rui, Cheng Wenlong. Experimental and numerical study of embedded microchannel heat sink[J]. High Power Laser and Particle Beams, 2023, 35: 099003. doi: 10.11884/HPLPB202335.230071
Citation: Jiang Wentao, Zhao Rui, Cheng Wenlong. Experimental and numerical study of embedded microchannel heat sink[J]. High Power Laser and Particle Beams, 2023, 35: 099003. doi: 10.11884/HPLPB202335.230071

Experimental and numerical study of embedded microchannel heat sink

doi: 10.11884/HPLPB202335.230071
  • Received Date: 2023-04-01
  • Accepted Date: 2023-05-04
  • Rev Recd Date: 2023-06-02
  • Available Online: 2023-08-09
  • Publish Date: 2023-09-15
  • To solve the heat dissipation problem of high heat flux density solid-state laser, a set of micro-compact embedded manifold S-shaped microchannel heat sink was developed using the MEMS technology and the microchannel/heat source co-design method. The heat exchanger uses continuous S-shaped microchannels and the manifold is used to form tiered and segmented flow. Experiment was conducted, using HFE-7100 as the cooling medium. Results show that the heat sink can dissipate 625 W/cm2, with a local maximum temperature of less than 100 ℃ and an average temperature rise of less than 45 ℃. Compared with the traditional manifold rectangular microchannel heat sink, the heat dissipation performance of S-shaped microchannel increased by 12%, but the flow resistance increased by about 56%. Numerical simulation methods were used to evaluate the structural parameters of the S-shaped microchannel heat sink’s heat dissipation ability and flow resistance by changing the amplitude and wavelength of the S shape according to the average temperature of the heating surface, average Nusselt number of the heat transfer surface, pressure drop, and comprehensive performance factor, to find the optimal structure design parameter combination of the S-shaped microchannel. The results show that the comprehensive performance factor of the heat sink has an optimal value under a specific S-shaped configuration, which will be used in subsequent studies.
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