Numerical simulation of Hf ion plasma source ion implantation in Cu substrate

Wang Jiamei; Zhao Qing; Wu Hongchen

doi:10.3788/HPLPB20122405.1103

Volume 24 Issue 05

Jun. 2016

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Wang Jiamei, Zhao Qing, Wu Hongchen. Numerical simulation of Hf ion plasma source ion implantation in Cu substrate[J]. High Power Laser and Particle Beams, 2012, 24: 1103-1106. doi: 10.3788/HPLPB20122405.1103

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Wang Jiamei, Zhao Qing, Wu Hongchen. Numerical simulation of Hf ion plasma source ion implantation in Cu substrate[J]. High Power Laser and Particle Beams, 2012, 24: 1103-1106. doi: 10.3788/HPLPB20122405.1103

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Numerical simulation of Hf ion plasma source ion implantation in Cu substrate

doi: 10.3788/HPLPB20122405.1103

1.
School of Physical Electronics,University of Electronic Science and Technology of China,Chengdu 610054,China;
2.
National Key Laboratory of Science and Technology on Power Beam Process,AVIC Beijing Aeronautical Manufacturing Technology Research Institute,Beijing 100024,China

Received Date: 2011-05-16
Publish Date: 2012-05-15

Abstract

Abstract

The Monte Carlo code SRIM was used to simulate the process of Hf ion plasma source ion implantation in Cu substrate. The relationship between energy and stopping power, the relationship between ion energy and range, and ion distribution of different implantation conditions were simulated. The results show that, nuclear stopping power dominates when the energy is lower than 6 MeV, otherwise electronic stopping power dominates. There are a Bragg peak of the energy deposition process and the phenomenon that the mass deposition area concentrates, and the range generally increases as the energy increases.
- plasma source ion implantation,
- monte carlo method,
- numerical simulation,
- surface modification

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