Numerical simulation of Hf ion plasma source ion implantation in Cu substrate

The Monte Carlo code SRIM was used to simulate the process of Hf ion plasma source ion implantation in Cu substrate. The relationship between energy and stopping power, the relationship between ion energy and range, and ion distribution of different implantation conditions were simulated. The results show that, nuclear stopping power dominates when the energy is lower than 6 MeV, otherwise electronic stopping power dominates. There are a Bragg peak of the energy deposition process and the phenomenon that the mass deposition area concentrates, and the range generally increases as the energy increases.