中红外高能激光探测单元

Chen Shaowu; Zhang Jianmin; Yuwen Cuilei; Feng Gang

doi:10.3788/HPLPB20122406.1306

Volume 24 Issue 06

May 2012

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Chen Shaowu, Zhang Jianmin, Yuwen Cuilei, et al. 中红外高能激光探测单元[J]. High Power Laser and Particle Beams, 2012, 24: 1306-1310. doi: 10.3788/HPLPB20122406.1306

Citation:

Chen Shaowu, Zhang Jianmin, Yuwen Cuilei, et al. 中红外高能激光探测单元[J]. High Power Laser and Particle Beams, 2012, 24: 1306-1310. doi: 10.3788/HPLPB20122406.1306

Chen Shaowu, Zhang Jianmin, Yuwen Cuilei, et al. 中红外高能激光探测单元[J]. High Power Laser and Particle Beams, 2012, 24: 1306-1310. doi: 10.3788/HPLPB20122406.1306

Citation:

Chen Shaowu, Zhang Jianmin, Yuwen Cuilei, et al. 中红外高能激光探测单元[J]. High Power Laser and Particle Beams, 2012, 24: 1306-1310. doi: 10.3788/HPLPB20122406.1306

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中红外高能激光探测单元

doi: 10.3788/HPLPB20122406.1306

1.
State Key Laboratory of Laser Interaction with Matter,Northwest Institute of Nuclear Technology,P.O.Box 69-26,Xi’an 710024,China

Received Date: 2011-11-23
Rev Recd Date: 2012-01-10
Publish Date: 2012-06-15

Abstract

Abstract

基于光电导探测原理，分析了影响室温光导型InSb探测器在中红外激光功率参数测量中的因素，得到了材料掺杂数密度、环境温度对探测器暗电阻、光谱响应率和光谱探测率的影响规律；开展了探测器在强激光辐照下的热效应理论模拟和实验研究，模拟分析了探测器在激光辐照下的动态响应特性。结果表明：针对测量系统中所使用的探测器，在激光功率密度小于4 W/cm2时，激光热效应对测量结果的影响可忽略；研制了相应的恒流源驱动电路，实现了中红外高能激光功率参数的探测。
- high energy laser,
- p-type indium antimonide photoconductor,
- dark resistance,
- spectral responsivity,
- spectral detectivity,