Qiu Weicheng, Wang Rui, Xu Zhongjie, et al. Optical crosstalk of HgCdTe PV linear array detector[J]. High Power Laser and Particle Beams, 2012, 24: 2324-2330. doi: 10.3788/HPLPB20122410.2325
Citation: Wu Wenjuan, Zhu Jingtao, Zhang Zhong, et al. Narrowband multilayers with low Z materials[J]. High Power Laser and Particle Beams, 2012, 24: 1785-1788. doi: 10.3788/HPLPB20122408.1785

Narrowband multilayers with low Z materials

doi: 10.3788/HPLPB20122408.1785
  • Received Date: 2011-07-14
  • Publish Date: 2012-08-15
  • Mo/Si multilayer are normally used in the early extreme ultraviolet (EUV) astronomical observation. In recent years people want to get observations in higher spectral resolution. Multilayer with low=Z materials have been studied. Four kinds of multilayer, Mg/SiC, Si/SiC, Si/B4C and Si/C multilayer were designed at the wavelength of 30.4 nm and compared with the normal Mo/Si multilayer. All the multilayer were prepared with DC magnetron sputtering, and their reflectivities were measured by synchrotron radiation. The results show that the bandwidth of Mg/SiC multilayer is 1.44 nm, which is the smallest, and the reflectivity is 44%, which is the highest. While the reflectivity of Mo/Si multilayer is only 24% and the bandwidth is 3.11 nm. The bandwidths of multilayer of low=Z materials are narrower than that of the normal multilayer. Therefore, multilayer of low=Z materials can be used in the EUV high spectral resolution field.
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      沈阳化工大学材料科学与工程学院 沈阳 110142

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