[1] | Xu Kun, Chen Zhipeng, Lin Zhouyang, Zheng Zhong, Sun Qian, Wang Yutian, Peng Bo. Preliminary development and high-voltage lifetime testing of vertical photoconductive semiconductor switches based Fe-Doped β-Ga2O3[J]. High Power Laser and Particle Beams. doi: 10.11884/HPLPB202537.240426 |
[2] | Sha Huiru, Xiao Longfei, Luan Chongbiao, Feng Zhuoyun, Li Yangfan, Sun Xun, Hu Xiaobo, Xu Xiangang. Damage morphology of GaAs photoconductive switch[J]. High Power Laser and Particle Beams, 2022, 34(9): 095018. doi: 10.11884/HPLPB202234.210579 |
[3] | Wang Wei, Liu Yi, Shen Yi, Xia Liansheng, Yang Chao, Ye Mao. Experimental study of high gain PCSS triggered by high-power pulse laser diode[J]. High Power Laser and Particle Beams, 2016, 28(09): 095003. doi: 10.11884/HPLPB201628.150883 |
[4] | Liu Hongwei, Yuan Jianqiang, Ma Xun, Jiang Ping, Wang Lingyun, Xie Weiping. Investigation of a combined PCSS and magnetic switch triggered by laser diode[J]. High Power Laser and Particle Beams, 2016, 28(07): 075004. doi: 10.11884/HPLPB201628.075004 |
[5] | Sun Yanling, Liu Xiaolong, Liu Huan, Shi Shunxiang. Carrier accumulation effect of nonlinear photoconductive semiconductor switches[J]. High Power Laser and Particle Beams, 2014, 26(07): 075002. doi: 10.11884/HPLPB201426.075002 |
[6] | Ma Xun, Deng Jianjun, Jiang Ping, Liu Hongwei, Yuan Jianqiang, Wang Lingyun, Li Hongtao. Analysis on voltage wave process of stacked Blumlein PFNs driving flash X-ray diodes[J]. High Power Laser and Particle Beams, 2014, 26(04): 045025. doi: 10.11884/HPLPB201426.045025 |
[7] | Wu Zhaoyang, Lu Wei, Yang Zhoubing. Effects of trigger light pulse on open performance of nonlinear photoconductive switch[J]. High Power Laser and Particle Beams, 2014, 26(08): 085003. doi: 10.11884/HPLPB201426.085003 |
[8] | Wang Wei, Deng Jianjun, Xia Liansheng, Chen Yi, Liu Yi. Conduction characteristics of photoconductive semiconductor switches based on high power laser diodes[J]. High Power Laser and Particle Beams, 2014, 26(04): 045102. doi: 10.11884/HPLPB201426.045102 |
[9] | Ma Xun, Deng Jianjun, Jiang Ping, Liu Jinfeng, Liu Hongwei, Yuan Jianqiang, Li Hongtao. Design of stacked Blumlein PFNs with photoconductive semiconductor switches[J]. High Power Laser and Particle Beams, 2013, 25(07): 1851-1855. doi: 10.3788/HPLPB20132507.1851 |
[10] | Wang Wei, Xia Liansheng, Chen Yi, Liu Yi, Deng Jianjun. Narrow-gap opposed-contact photoconductive semiconductor switch[J]. High Power Laser and Particle Beams, 2013, 25(05): 1261-1264. doi: 10.3788/HPLPB20132505.1261 |
[11] | Ma Xun, Deng Jianjun, Liu Jinfeng, Liu Hongwei, Li Hongtao. Energy transfer efficiency of Blumlein-PFN with GaAs-PCSS[J]. High Power Laser and Particle Beams, 2013, 25(03): 794-798. doi: 10.3788/HPLPB20132503.0794 |
[12] | Liu Jinfeng, Yuan Jianqiang, Liu Hongwei, Zhao Yue, Jiang Ping, Li Hongtao, Xie Weiping. Factors affecting minimum on-state resistance of SiC photoconductive semiconductor switch[J]. High Power Laser and Particle Beams, 2012, 24(03): 607-611. doi: 10.3788/HPLPB20122403.0607 |
[13] | liu hongwei, yuan jianqiang, liu jinfeng, zhao yue, li hongtao, xie weiping. Experimental study of GaAs photoconductive semiconductor switch with bulk structure[J]. High Power Laser and Particle Beams, 2011, 23(11): 0- . |
[14] | liu hongwei, yuan jianqiang, liu jinfeng, li hongtao, xie weiping, jiang weihua. Experimental investigation on lifetime of high power GaAs photoconductive semiconductor switch[J]. High Power Laser and Particle Beams, 2010, 22(04): 0- . |
[15] | yuan jianqiang, li hongtao, liu hongwei, liu jinfeng, xie weiping, wang xinxin, jiang weihua. Study on high-power photoconductive semiconductor switches[J]. High Power Laser and Particle Beams, 2010, 22(04): 0- . |
[16] | sun yunqing, yang hongchun, wu minghe, zeng gang, cui haijuan. Voltage conversion ratio of photoconductive semiconductor switch in microstrip test circuit[J]. High Power Laser and Particle Beams, 2010, 22(10): 0- . |
[17] | zhao yue, xie weiping, li hongtao, liu jinfeng, liu hongwei, zhao shicao, yuan jianqiang. Numerical simulation on factors affecting critical frequency of high-power photoconductive semiconductor switch[J]. High Power Laser and Particle Beams, 2010, 22(11): 0- . |
[18] | liu hongwei, yuan jianqiang, liu jinfeng, li hongtao, xie weiping, jiang weihua. Influence of exterior electric parameters on GaAs photoconductive semiconductor switch’s turn-on process[J]. High Power Laser and Particle Beams, 2010, 22(02): 0- . |
[19] | yuan jianqiang, liu hongwei, liu jinfeng, li hongtao, xie weiping, wang xinxin, jiang weihua. 50 kV semi-insulating GaAs photoconductive semiconductor switch[J]. High Power Laser and Particle Beams, 2009, 21(05): 0- . |
[20] | yuan jian-qiang, xie wei-ping, zhou liang-ji, chen lin, wang xin-xin. Developments and applications of photoconductive semiconductor switches in pulsed power technology[J]. High Power Laser and Particle Beams, 2008, 20(01): 0- . |