Ma Xun, Den Jianjun, Liu Jinfeng, et al. Voltage transfer efficiency of Blumlein- pulse forming networks based on photoconductive semiconductor switches[J]. High Power Laser and Particle Beams, 2012, 24: 2502-2506. doi: 10.3788/HPLPB20122410.2502
Citation:
Ma Xun, Den Jianjun, Liu Jinfeng, et al. Voltage transfer efficiency of Blumlein- pulse forming networks based on photoconductive semiconductor switches[J]. High Power Laser and Particle Beams, 2012, 24: 2502-2506. doi: 10.3788/HPLPB20122410.2502
Ma Xun, Den Jianjun, Liu Jinfeng, et al. Voltage transfer efficiency of Blumlein- pulse forming networks based on photoconductive semiconductor switches[J]. High Power Laser and Particle Beams, 2012, 24: 2502-2506. doi: 10.3788/HPLPB20122410.2502
Citation:
Ma Xun, Den Jianjun, Liu Jinfeng, et al. Voltage transfer efficiency of Blumlein- pulse forming networks based on photoconductive semiconductor switches[J]. High Power Laser and Particle Beams, 2012, 24: 2502-2506. doi: 10.3788/HPLPB20122410.2502
The factors affecting the voltage transfer efficiency of Blumlein pulse forming networks (PFNs) based on photoconductive semiconductor switch (PCSS) were preliminarily studied in experiment to get rectangle high voltage pulses on high impedance loads with high energy transfer efficiency and high repetition rate. The Blumlein-PFN is composed of the ceramic capacitor,aluminum strip and GaAs-PCSS. The Blumlein-PFNs impedance is 7.8 with an electric length of 32.6 ns. The relations of voltage transfer efficiency to PCSS electric field and laser energy were studied on a matched load. Experiment results shows that high on-resistance is the main factor affecting the voltage transfer efficiency. When the electric field is 25.1 kV/cm,the efficiency is 75.6% with an on-resistance of 2.88 at a laser energy of 3.5 mJ and 83.2% with an on-resistance of 1.89 at a laser energy of 30.4 mJ.
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