Ren Huan, Wang Junbo, Qiu Rong, et al. Ultrafast dynamics of intense femtosecond laser ablation of silicon[J]. High Power Laser and Particle Beams, 2012, 24: 2787-2790. doi: 10.3788/HPLPB20122412.2787
Citation:
Ren Huan, Wang Junbo, Qiu Rong, et al. Ultrafast dynamics of intense femtosecond laser ablation of silicon[J]. High Power Laser and Particle Beams, 2012, 24: 2787-2790. doi: 10.3788/HPLPB20122412.2787
Ren Huan, Wang Junbo, Qiu Rong, et al. Ultrafast dynamics of intense femtosecond laser ablation of silicon[J]. High Power Laser and Particle Beams, 2012, 24: 2787-2790. doi: 10.3788/HPLPB20122412.2787
Citation:
Ren Huan, Wang Junbo, Qiu Rong, et al. Ultrafast dynamics of intense femtosecond laser ablation of silicon[J]. High Power Laser and Particle Beams, 2012, 24: 2787-2790. doi: 10.3788/HPLPB20122412.2787
Joint Laboratory for Extreme Conditions Matter Properties,Southwest University of Science and Technology and Research Center of Laser Fusion,CAEP,Mianyang 621010,China;
2.
Research Center of Laser Fusion,CAEP,P.O.Box 919-988,Mianyang 621900,China
The dynamic process of intense 50 fs laser ablation of silicon is investigated by the way of ultrafast time-resolved shadowgraphy. The formation and development processes of plasma and shock wave are recorded, and it is known that the process of material ejection is discontinuous. The process can be divided obviously into two processes, which shows that at different stages there are different mechanism leading the interaction of laser and material. In the shadowgraph of 19 ns time delay, it is found that the shock wave is distorted from the hemispherical shape.
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