Design of C-band 50 MW klystron with traveling wave output structure

Zhang Rui; Wang Yong

doi:10.3788/HPLPB20122412.2858

Volume 24 Issue 12

Nov. 2012

Turn off MathJax

Article Contents

Abstract

References

Article Navigation > High Power Laser and Particle Beams > 2012 > 24(12): 2858-2864

Sun Dimin, Ma Guowu, Chen Hongbin, et al. Design of 95 GHz third-harmonic gyrotons[J]. High Power Laser and Particle Beams, 2012, 24: 2683-2686. doi: 10.3788/HPLPB20122411.2683

Citation:

Zhang Rui, Wang Yong. Design of C-band 50 MW klystron with traveling wave output structure[J]. High Power Laser and Particle Beams, 2012, 24: 2858-2864. doi: 10.3788/HPLPB20122412.2858

Sun Dimin, Ma Guowu, Chen Hongbin, et al. Design of 95 GHz third-harmonic gyrotons[J]. High Power Laser and Particle Beams, 2012, 24: 2683-2686. doi: 10.3788/HPLPB20122411.2683

Citation:

Zhang Rui, Wang Yong. Design of C-band 50 MW klystron with traveling wave output structure[J]. High Power Laser and Particle Beams, 2012, 24: 2858-2864. doi: 10.3788/HPLPB20122412.2858

PDF( 3017 KB)

Design of C-band 50 MW klystron with traveling wave output structure

doi: 10.3788/HPLPB20122412.2858

Zhang Rui^1,2,
Wang Yong¹

1.
Institute of Electronics,Chinese Academy of Sciences,Beijing 100190,China;
2.
Graduate University of Chinese Academy of Sciences,Beijing 100049,China

Received Date: 2012-01-12
Rev Recd Date: 2012-09-10
Publish Date: 2012-11-05

Abstract

Abstract

This paper presents the simulation study of a C-band 50 MW klystron with disc-loaded waveguide traveling wave output structure. The electron gun with a perveance of 1.53 P is designed. The gun has a voltage gradient lower than 22.1 kV/mm and a cathode load current lower than 6.3 A/cm2. The beam focusing system is a space-charge balanced flow type with solenoid magnet structure and the focusing beam trajectories have a good laminar condition. A single gap cavity is adopted instead of the traveling wave output structure in the initial beam-wave interaction simulation to decide the parameters of the cavities except the output structure. A C-band disc-loaded waveguide output structure working at /2 mode is designed and the dispersion and interaction impedance of the structure are determined by the CST code. The beam-wave interaction system with disc-loaded waveguide output structure is simulated by a three-dimensional PIC code. More than 50 MW output power is obtained. The efficiency is more than 45% and the saturate gain is more than 50 dB. The voltage gradient of the disc-loaded waveguide output structure is 30 percent less than that of the single gap cavity and there is an increase of 4% in efficiency above that of the single gap cavity.
- klystron,
- disc-loaded waveguide,
- traveling wave output structure,
- beam-wave interaction

FullText(HTML)

References(0)

References

Relative Articles

[1]	Xu Kun, Chen Zhipeng, Lin Zhouyang, Zheng Zhong, Sun Qian, Wang Yutian, Peng Bo. Preliminary development and high-voltage lifetime testing of vertical photoconductive semiconductor switches based Fe-Doped β-Ga₂O₃[J]. High Power Laser and Particle Beams. doi: 10.11884/HPLPB202537.240426
[2]	Sha Huiru, Xiao Longfei, Luan Chongbiao, Feng Zhuoyun, Li Yangfan, Sun Xun, Hu Xiaobo, Xu Xiangang. Damage morphology of GaAs photoconductive switch[J]. High Power Laser and Particle Beams, 2022, 34(9): 095018. doi: 10.11884/HPLPB202234.210579
[3]	Wang Wei, Liu Yi, Shen Yi, Xia Liansheng, Yang Chao, Ye Mao. Experimental study of high gain PCSS triggered by high-power pulse laser diode[J]. High Power Laser and Particle Beams, 2016, 28(09): 095003. doi: 10.11884/HPLPB201628.150883
[4]	Liu Hongwei, Yuan Jianqiang, Ma Xun, Jiang Ping, Wang Lingyun, Xie Weiping. Investigation of a combined PCSS and magnetic switch triggered by laser diode[J]. High Power Laser and Particle Beams, 2016, 28(07): 075004. doi: 10.11884/HPLPB201628.075004
[5]	Sun Yanling, Liu Xiaolong, Liu Huan, Shi Shunxiang. Carrier accumulation effect of nonlinear photoconductive semiconductor switches[J]. High Power Laser and Particle Beams, 2014, 26(07): 075002. doi: 10.11884/HPLPB201426.075002
[6]	Ma Xun, Deng Jianjun, Jiang Ping, Liu Hongwei, Yuan Jianqiang, Wang Lingyun, Li Hongtao. Analysis on voltage wave process of stacked Blumlein PFNs driving flash X-ray diodes[J]. High Power Laser and Particle Beams, 2014, 26(04): 045025. doi: 10.11884/HPLPB201426.045025
[7]	Wu Zhaoyang, Lu Wei, Yang Zhoubing. Effects of trigger light pulse on open performance of nonlinear photoconductive switch[J]. High Power Laser and Particle Beams, 2014, 26(08): 085003. doi: 10.11884/HPLPB201426.085003
[8]	Wang Wei, Deng Jianjun, Xia Liansheng, Chen Yi, Liu Yi. Conduction characteristics of photoconductive semiconductor switches based on high power laser diodes[J]. High Power Laser and Particle Beams, 2014, 26(04): 045102. doi: 10.11884/HPLPB201426.045102
[9]	Ma Xun, Deng Jianjun, Jiang Ping, Liu Jinfeng, Liu Hongwei, Yuan Jianqiang, Li Hongtao. Design of stacked Blumlein PFNs with photoconductive semiconductor switches[J]. High Power Laser and Particle Beams, 2013, 25(07): 1851-1855. doi: 10.3788/HPLPB20132507.1851
[10]	Wang Wei, Xia Liansheng, Chen Yi, Liu Yi, Deng Jianjun. Narrow-gap opposed-contact photoconductive semiconductor switch[J]. High Power Laser and Particle Beams, 2013, 25(05): 1261-1264. doi: 10.3788/HPLPB20132505.1261
[11]	Ma Xun, Deng Jianjun, Liu Jinfeng, Liu Hongwei, Li Hongtao. Energy transfer efficiency of Blumlein-PFN with GaAs-PCSS[J]. High Power Laser and Particle Beams, 2013, 25(03): 794-798. doi: 10.3788/HPLPB20132503.0794
[12]	Liu Jinfeng, Yuan Jianqiang, Liu Hongwei, Zhao Yue, Jiang Ping, Li Hongtao, Xie Weiping. Factors affecting minimum on-state resistance of SiC photoconductive semiconductor switch[J]. High Power Laser and Particle Beams, 2012, 24(03): 607-611. doi: 10.3788/HPLPB20122403.0607
[13]	liu hongwei, yuan jianqiang, liu jinfeng, zhao yue, li hongtao, xie weiping. Experimental study of GaAs photoconductive semiconductor switch with bulk structure[J]. High Power Laser and Particle Beams, 2011, 23(11): 0- .
[14]	liu hongwei, yuan jianqiang, liu jinfeng, li hongtao, xie weiping, jiang weihua. Experimental investigation on lifetime of high power GaAs photoconductive semiconductor switch[J]. High Power Laser and Particle Beams, 2010, 22(04): 0- .
[15]	yuan jianqiang, li hongtao, liu hongwei, liu jinfeng, xie weiping, wang xinxin, jiang weihua. Study on high-power photoconductive semiconductor switches[J]. High Power Laser and Particle Beams, 2010, 22(04): 0- .
[16]	sun yunqing, yang hongchun, wu minghe, zeng gang, cui haijuan. Voltage conversion ratio of photoconductive semiconductor switch in microstrip test circuit[J]. High Power Laser and Particle Beams, 2010, 22(10): 0- .
[17]	zhao yue, xie weiping, li hongtao, liu jinfeng, liu hongwei, zhao shicao, yuan jianqiang. Numerical simulation on factors affecting critical frequency of high-power photoconductive semiconductor switch[J]. High Power Laser and Particle Beams, 2010, 22(11): 0- .
[18]	liu hongwei, yuan jianqiang, liu jinfeng, li hongtao, xie weiping, jiang weihua. Influence of exterior electric parameters on GaAs photoconductive semiconductor switch’s turn-on process[J]. High Power Laser and Particle Beams, 2010, 22(02): 0- .
[19]	yuan jianqiang, liu hongwei, liu jinfeng, li hongtao, xie weiping, wang xinxin, jiang weihua. 50 kV semi-insulating GaAs photoconductive semiconductor switch[J]. High Power Laser and Particle Beams, 2009, 21(05): 0- .
[20]	yuan jian-qiang, xie wei-ping, zhou liang-ji, chen lin, wang xin-xin. Developments and applications of photoconductive semiconductor switches in pulsed power technology[J]. High Power Laser and Particle Beams, 2008, 20(01): 0- .