Responses of silicon bar fixed in waveguide to high power terahertz pulse

Researches on responses of an n-type silicon bar fixed in a rectangular waveguide to high power terahertz pulse have been carried out for the 0.3~0.4 THz band. The distribution of electromagnetic field components, voltage standing-wave ratio(VSWR) in the waveguide, and the average electric field in the n-type silicon bar is determined by means of a three-dimensional finite-difference time-domain method. By adjusting several factors, such as the length, width, height and the specific resistance of the silicon bar, a novel project of a sensor that can be used as measurement device for high power terahertz pulse directly is presented. The relative sensitivity of the sensor is about 0.509 kW-1, its fluctuation is in the range of 14%, and its VSWR is no more than 1.34.