Responses of silicon bar fixed in waveguide to high power terahertz pulse

Wang Xuefeng; Wang Jianguo; Wang Guangqiang; Tong Changjiang; Li Shuang1; Li Yong

doi:10.3788/HPLPB20132502.0455

Volume 25 Issue 02

Dec. 2012

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Article Navigation > High Power Laser and Particle Beams > 2013 > 25(02): 455-460

Wang Xuefeng, Wang Jianguo, et al. Responses of silicon bar fixed in waveguide to high power terahertz pulse[J]. High Power Laser and Particle Beams, 2013, 25: 455-460. doi: 10.3788/HPLPB20132502.0455

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Wang Xuefeng, Wang Jianguo, et al. Responses of silicon bar fixed in waveguide to high power terahertz pulse[J]. High Power Laser and Particle Beams, 2013, 25: 455-460. doi: 10.3788/HPLPB20132502.0455

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Responses of silicon bar fixed in waveguide to high power terahertz pulse

doi: 10.3788/HPLPB20132502.0455

1.
Northwest Institute of Nuclear Technology,Xi’an 710024,China;
2.
63655 Unit,PLA,Urumqi 841700,China;
3.
School of Electronic and Information Engineering,Xi’an Jiaotong University,Xi’an 710049,China

Received Date: 2012-09-18
Rev Recd Date: 2012-11-06
Publish Date: 2013-02-10

Abstract

Abstract

Researches on responses of an n-type silicon bar fixed in a rectangular waveguide to high power terahertz pulse have been carried out for the 0.3~0.4 THz band. The distribution of electromagnetic field components, voltage standing-wave ratio(VSWR) in the waveguide, and the average electric field in the n-type silicon bar is determined by means of a three-dimensional finite-difference time-domain method. By adjusting several factors, such as the length, width, height and the specific resistance of the silicon bar, a novel project of a sensor that can be used as measurement device for high power terahertz pulse directly is presented. The relative sensitivity of the sensor is about 0.509 kW-1, its fluctuation is in the range of 14%, and its VSWR is no more than 1.34.
- high power,
- terahertz,
- rectangular waveguide,
- resistive sensor,
- measurement

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