Numerical simulation for calculating transient response of coaxial line with diode to pulsed X-ray

Zhao Mo; Cheng Yinhui; Wu Wei; Ma Liang; Li Jinxi; Zhou Hui; Li Baozhong; Zhu Meng

doi:10.3788/HPLPB20132502.0490

Volume 25 Issue 02

Dec. 2012

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Article Navigation > High Power Laser and Particle Beams > 2013 > 25(02): 490-494

Li ChaoLong, Shi Haiquan, Liu Zhengfang, et al. Simulation calculation of intense beam transporting in dipole magnet field[J]. High Power Laser and Particle Beams, 2012, 24: 2718-2722. doi: 10.3788/HPLPB20122411.2718

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Zhao Mo, Cheng Yinhui, Wu Wei, et al. Numerical simulation for calculating transient response of coaxial line with diode to pulsed X-ray[J]. High Power Laser and Particle Beams, 2013, 25: 490-494. doi: 10.3788/HPLPB20132502.0490

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Numerical simulation for calculating transient response of coaxial line with diode to pulsed X-ray

doi: 10.3788/HPLPB20132502.0490

1.
Northwest Institute of Nuclear Technology,P.O.Box 69-10,Xi’an 710024,China

Received Date: 2012-05-16
Rev Recd Date: 2012-07-31
Publish Date: 2013-02-10

Abstract

Abstract

This paper introduces the transmission line method which is used to calculate the coaxial response to X-ray and the drift-diffusion method which is used to calculate the parameters of semiconductor devices. Combining the transmission line method with the drift-diffusion method, we calculated the X-ray transient response of coaxial line with PIN diode. The coupled model shows the relation of coaxial lines response to pulsed X-ray and the diodes status. An example was calculated using the coupled model, the implications of the data were discussed in detail. The coupled model can be used in calculating the responses of coaxial lines with other semiconductor devices to pulsed X-ray.
- diode load,
- X-ray,
- transmission line model,
- drift-diffusion model

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