Jiang Weihua. Repetition rate pulsed power technology and its applications:(iv) Advantage and limitation of semiconductor switches[J]. High Power Laser and Particle Beams, 2013, 25: 537-543. doi: 10.3788/HPLPB20132503.0537
Citation:
Jiang Weihua. Repetition rate pulsed power technology and its applications:(iv) Advantage and limitation of semiconductor switches[J]. High Power Laser and Particle Beams, 2013, 25: 537-543. doi: 10.3788/HPLPB20132503.0537
Jiang Weihua. Repetition rate pulsed power technology and its applications:(iv) Advantage and limitation of semiconductor switches[J]. High Power Laser and Particle Beams, 2013, 25: 537-543. doi: 10.3788/HPLPB20132503.0537
Citation:
Jiang Weihua. Repetition rate pulsed power technology and its applications:(iv) Advantage and limitation of semiconductor switches[J]. High Power Laser and Particle Beams, 2013, 25: 537-543. doi: 10.3788/HPLPB20132503.0537
Power semiconductor devices have been used for repetitive pulsed power generation, due to their advantages in stability, reliability, and lifetime. On the other hand, their limitations in power capability and noise vulnerability are expected to be overcome by using various techniques in gate control and circuit configuration. In this paper, some pulse circuit methods to improve the working ability of semiconductor switches are introduced, including using a number of devices in series and parallel, voltage superposition, combination and complementation of switching devices.