Wang Wei, Xia Liansheng, Chen Yi, et al. Narrow-gap opposed-contact photoconductive semiconductor switch[J]. High Power Laser and Particle Beams, 2013, 25: 1261-1264. doi: 10.3788/HPLPB20132505.1261
Citation:
Wang Wei, Xia Liansheng, Chen Yi, et al. Narrow-gap opposed-contact photoconductive semiconductor switch[J]. High Power Laser and Particle Beams, 2013, 25: 1261-1264. doi: 10.3788/HPLPB20132505.1261
Wang Wei, Xia Liansheng, Chen Yi, et al. Narrow-gap opposed-contact photoconductive semiconductor switch[J]. High Power Laser and Particle Beams, 2013, 25: 1261-1264. doi: 10.3788/HPLPB20132505.1261
Citation:
Wang Wei, Xia Liansheng, Chen Yi, et al. Narrow-gap opposed-contact photoconductive semiconductor switch[J]. High Power Laser and Particle Beams, 2013, 25: 1261-1264. doi: 10.3788/HPLPB20132505.1261
A kind of narrow-gap opposed-contact photoconductive semiconductor switch(PCSS) is described in this paper, and it will be used in the dielectric wall accelerator(DWA) in a near future. The switch we used in the experiment is an opposed contact GaAs PCSS whose electrode gap is 5 mm. When the bias pulsed voltage is between 15 kV and 22 kV, it works in the nonlinear mode. The pulsed laser, triggering the PCSS, is from the laser diode, and it has the wavelength, FWHM, rise-time, and peak power of about 905 nm, 20 ns, 3.1 ns and 90 W, respectively. As a result, when the PCSS works at a low voltage, it has a long lifetime but poor performance; while, when the PCSS works at a high voltage and is triggered by a high peak power pulsed laser, it works well but has a shorter lifetime.
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