Key technologies on series connection of insulated gate bipolar transistors

Yu Lin; Huang Kang; Wang Haijun; Wang Jianping; Gai Ling

doi:10.3788/HPLPB20132505.1315

Volume 25 Issue 05

Mar. 2013

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Article Navigation > High Power Laser and Particle Beams > 2013 > 25(05): 1315-1319

Wang Songsong, Shu Ting, Yang Hanwu. Analytical expression of output pulse for stacked Blumlein line[J]. High Power Laser and Particle Beams, 2013, 25: 1409-1413. doi: 10.3788/HPLPB20132506.1409

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Yu Lin, Huang Kang, Wang Haijun, et al. Key technologies on series connection of insulated gate bipolar transistors[J]. High Power Laser and Particle Beams, 2013, 25: 1315-1319. doi: 10.3788/HPLPB20132505.1315

Wang Songsong, Shu Ting, Yang Hanwu. Analytical expression of output pulse for stacked Blumlein line[J]. High Power Laser and Particle Beams, 2013, 25: 1409-1413. doi: 10.3788/HPLPB20132506.1409

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Key technologies on series connection of insulated gate bipolar transistors

doi: 10.3788/HPLPB20132505.1315

1.
School of Biosystems Engineering and Food Science,Zhejiang University,Hangzhou 310058,China

Received Date: 2012-07-27
Rev Recd Date: 2012-11-08
Publish Date: 2013-03-12

Abstract

Abstract

In order to achieve the series connection of insulated gate bipolar transistors (IGBTs), resistor-capacitor-diode (RCD) snubber circuit, which was chosen for active voltage sharing, was analyzed by mathematical methods, then the RCD snubber circuit parameters were modeled and proved by PSpice simulations. Based on optical fiber transmission and M57962L, the drive circuit and fault feedback circuit controlled by digital signal processor (DSP) were designed to drive 32 series connected IGBTs and for overcurrent and short circuit protection. The maximum break-over time in 32 IGBTs was 90 ns, while failure protection completion time was 6 s. Eight independent isolated sources were designed for the isolation voltageof 50 kV. Based on the above research achievements, the 32 IGBTs series connected circuit can work safely under the voltage of 20 kV.

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